IRF9393TRPBF vs IRF9358PBF
對 IRF9393TRPBF 和 IRF9358PBF 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。如需更多信息，請參閱其數據手冊或聯繫我們的銷售團隊，我們將協助您選擇適合您設計的元件。
包裹
SOIC-8
描述
MOSFET P-CH 30V 9.2A 8SO
MOSFET 2P-CH 30V 9.2A 8SO
Series
HEXFET®
HEXFET®
Part Status
-
Discontinued at Digi-Key
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Configuration
-
2 P-Channel (Dual)
FET Feature
-
Logic Level Gate
Drain to Source Voltage (Vdss)
-
30V
Current - Continuous Drain (Id) @ 25°C
-
9.2A
Rds On (Max) @ Id, Vgs
-
16.3mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id
-
2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
-
38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
-
1740pF @ 25V
Power - Max
-
2W
Operating Temperature
-
-55°C ~ 150°C (TJ)
Mounting Type
-
Surface Mount
Base Product Number
-
IRF9358
ProductStatus
Active
-
FETType
P-Channel
-
DraintoSourceVoltage(Vdss)
30 V
-
Current-ContinuousDrain(Id)@25°C
9.2A (Ta)
-
DriveVoltage(MaxRdsOnMinRdsOn)
10V, 20V
-
RdsOn(Max)@IdVgs
13.3mOhm @ 9.2A, 20V
-
Vgs(th)(Max)@Id
2.4V @ 25µA
-
GateCharge(Qg)(Max)@Vgs
38 nC @ 10 V
-
Vgs(Max)
±25V
-
InputCapacitance(Ciss)(Max)@Vds
1110 pF @ 25 V
-
PowerDissipation(Max)
2.5W (Ta)
-
OperatingTemperature
-55°C ~ 150°C (TJ)
-
MountingType
Surface Mount
-
