IRF9393TRPBF vs IRF9358PBF

對 IRF9393TRPBF 和 IRF9358PBF 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRF9393TRPBF IRF9358PBF
Series HEXFET® HEXFET®
Part Status Active Discontinued at Digi-Key
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Configuration - 2 P-Channel (Dual)
FET Feature - Logic Level Gate
Drain to Source Voltage (Vdss) 30 V 30V
Current - Continuous Drain (Id) @ 25°C - 9.2A
Rds On (Max) @ Id, Vgs - 16.3mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id - 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs - 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds - 1740pF @ 25V
Power - Max - 2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number - IRF9358
FET Type P-Channel -
Current - Continuous Drain(Id) @ 25°C 9.2A (Ta) -
Drive Voltage(Max Rds On Min Rds On) 10V, 20V -
Rds On(Max) @ Id Vgs 13.3mOhm @ 9.2A, 20V -
Vgs(th)(Max) @ Id 2.4V @ 25µA -
Gate Charge(Qg)(Max) @ Vgs 38 nC @ 10 V -
Vgs(Max) ±25V -
Input Capacitance(Ciss)(Max) @ Vds 1110 pF @ 25 V -
Power Dissipation (Max) 2.5W (Ta) -
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