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IRF9310TRPBF
+物料清單MOSFET P-CH 30V 20A 8SO
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製造商英飛淩科技
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製造商部分 #IRF9310TRPBF
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規格
| 屬性 | 價值 |
| Series | HEXFET® |
| PartStatus | Obsolete |
| BaseProductNumber | IRF9310 |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 20A (Ta) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@Id,Vgs | 4.6mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 2.4V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 165 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5250 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
| Package | 8-SOIC (0.154", 3.90mm Width) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概述
Description
Key specifications of the IRF9310TRPBF include a maximum drain-source voltage (V_DS) of -30V and a continuous drain current (I_D) of -6.5A at 25°C. It features a low gate charge, which enhances its efficiency by reducing the power loss during switching operations. The device is packaged in an industry-standard, surface-mount SO-8 package, making it suitable for applications with limited space.
Typical applications for the IRF9310TRPBF include DC-DC converters, power management in portable devices, and load switching. Its P-channel design makes it advantageous for high-side switching configurations. The device is lead-free and RoHS compliant, aligning with environmental and safety standards.
Equivalent
Features
1. Voltage Rating: It has a drain-to-source breakdown voltage (Vds) of -30V.
2. Current Capacity: It supports a continuous drain current of -5.8A at 25°C.
3. Rds(on): Offers a low on-resistance of approximately 0.06 ohms, optimizing power efficiency by minimizing energy losses.
4. Package Type: Available in a compact SO-8 package, suitable for space-constrained designs.
5. Thermal Performance: Designed to handle thermal stress efficiently, aiding in reliable operation under various conditions.
6. High-Speed Switching: Capable of fast switching speeds, enhancing performance in applications requiring quick response times.
7. Lead-Free: Compliant with RoHS standards, ensuring environmentally friendly production processes.
These features make the IRF9310TRPBF suitable for use in power management applications, load switching, and other circuits requiring efficient power control.
Pinout
Here’s a concise overview of its pin configuration and functions:
1. Pin Count: It generally has 8 pins.
2. Pin Functions:
- Pins 1, 2, 3: Source 1 (S1) - Connected internally, these pins serve as the source for the first MOSFET.
- Pin 4: Gate 1 (G1) - This is the gate terminal for the first MOSFET.
- Pin 5: Gate 2 (G2) - This is the gate terminal for the second MOSFET.
- Pins 6, 7, 8: Source 2 (S2) - Connected internally, these pins serve as the source for the second MOSFET.
The drain terminals of both MOSFETs are internally connected to the PowerSO-8 tab to provide efficient heat dissipation.
This device is optimized for high-efficiency DC-DC conversion, load switching, and other power management applications.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the maximum drain-source voltage for the IRF9310TRPBF?
A: The maximum drain-to-source voltage (Vdss) is 30V, making it suitable for low-voltage power management applications.
Q: Can this MOSFET handle continuous current at room temperature?
A: Yes, it supports a continuous drain current (Id) of 20A at 25°C (Ta), ideal for moderate power loads in surface-mount designs.
Q: What is the typical on-resistance at 10V gate drive?
A: The typical Rds(on) is 4.6mOhm at Vgs=10V and Id=20A, ensuring low conduction losses for P-Channel MOSFET applications.
Q: What gate voltage is required to fully enhance this P-Channel MOSFET?
A: The drive voltage range is 4.5V to 10V, with optimal enhancement achieved at 10V for minimal Rds(on).
Q: What is the maximum allowed gate-source voltage?
A: The Vgs maximum rating is ±20V, providing a safe margin for gate drive transients in switching circuits.
Q: Is the IRF9310TRPBF suitable for high-frequency switching?
A: Yes, with a gate charge (Qg) of 165nC at Vgs=10V and an input capacitance (Ciss) of 5250pF, it is suitable for moderate-speed switching up to several hundred kHz.
Q: What is the maximum power dissipation for this device?
A: The maximum power dissipation is 2.5W (Ta), so proper thermal management or heatsinking is required for continuous high-current operation.
