IRF9317TRPBF vs IRF9358PBF
對 IRF9358PBF 和 IRF9317TRPBF 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。如需更多信息，請參閱其數據手冊或聯繫我們的銷售團隊，我們將協助您選擇適合您設計的元件。
包裹
SOIC-8
描述
MOSFET 2P-CH 30V 9.2A 8SO
MOSFET P-CH 30V 16A 8SO
Series
HEXFET®
HEXFET®
Part Status
Discontinued at Digi-Key
-
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
-
FET Feature
Logic Level Gate
-
Drain to Source Voltage (Vdss)
30V
-
Current - Continuous Drain (Id) @ 25°C
9.2A
-
Rds On (Max) @ Id, Vgs
16.3mOhm @ 9.2A, 10V
-
Vgs(th) (Max) @ Id
2.4V @ 25µA
-
Gate Charge (Qg) (Max) @ Vgs
38nC @ 10V
-
Input Capacitance (Ciss) (Max) @ Vds
1740pF @ 25V
-
Power - Max
2W
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Mounting Type
Surface Mount
-
Base Product Number
IRF9358
-
ProductStatus
-
Active
FETType
-
P-Channel
DraintoSourceVoltage(Vdss)
-
30 V
Current-ContinuousDrain(Id)@25°C
-
16A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)
-
4.5V, 10V
RdsOn(Max)@IdVgs
-
6.6mOhm @ 16A, 10V
Vgs(th)(Max)@Id
-
2.4V @ 50µA
GateCharge(Qg)(Max)@Vgs
-
92 nC @ 10 V
Vgs(Max)
-
±20V
InputCapacitance(Ciss)(Max)@Vds
-
2820 pF @ 15 V
PowerDissipation(Max)
-
2.5W (Ta)
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Surface Mount
