Part A
IRF9393TRPBF
英飛淩科技
- Lifecycle
- Active
- Stock
- 4060 件
- Package
- SOIC-8
- Series
- 電晶體-FET、MOSFET-單
對 IRF9393TRPBF 和 IRF9321TRPBF 的深入比較,為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素,包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異,簡化了元件選擇,讓您更輕鬆地為您的特定應用選擇最佳方案。
英飛淩科技
英飛淩科技
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Use manufacturer datasheets as the final authority.
| Specification | IRF9393TRPBF | IRF9321TRPBF |
|---|---|---|
| Series | HEXFET® | HEXFET® |
| Part Status | Active | Active |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 9.2A (Ta) | 15A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V, 20V | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 13.3mOhm @ 9.2A, 20V | 7.2mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 2.4V @ 25µA | 2.4V @ 50µA |
| Gate Charge(Qg)(Max) @ Vgs | 38 nC @ 10 V | 98 nC @ 10 V |
| Vgs(Max) | ±25V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1110 pF @ 25 V | 2590 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |