IRF9362TRPBF

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IRF9362TRPBF

+物料清單

MOSFET 2P-CH 30V 8A 8SO

  • 製造商英飛淩科技

  • 製造商部分 #IRF9362TRPBF

  • 有存貨8274

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規格

屬性 價值
Series HEXFET®
PartStatus Last Time Buy
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V
Current-ContinuousDrain(Id)@25°C 8A
RdsOn(Max)@Id,Vgs 21mOhm @ 8A, 10V
Vgs(th)(Max)@Id 2.4V @ 25µA
GateCharge(Qg)(Max)@Vgs 39nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 1300pF @ 25V
Power-Max 2W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154", 3.90mm Width)
SupplierDevicePackage 8-SO
BaseProductNumber IRF9362

概述

Description

The IRF9362TRPBF is a n-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a low on-resistance (RDS(on)), making it suitable for power management in various electronic devices, including power supplies, motor drivers, and DC-DC converters.
Key specifications include a maximum drain-source voltage (VDS) of 60V, a continuous drain current (ID) of up to 62A, and a threshold voltage (VGS(th)) typically ranging from 2V to 4V. The device is housed in a TO-220 package, facilitating efficient heat dissipation and easy mounting on PCBs.
The IRF9362TRPBF is notable for its fast switching characteristics, enabling it to operate efficiently at higher frequencies. It is also RoHS compliant, ensuring it meets environmental standards. Users typically choose this MOSFET for its robustness and reliability in demanding applications, making it a popular choice among engineers and designers in the power electronics field.

Equivalent

The IRF9362TRPBF is an N-channel MOSFET. Equivalent products include the STP60NF06, BUK956R-100, and FQP30N06L. Always verify specifications such as voltage rating, current handling, and Rds(on) to ensure compatibility for your specific application.

Features

The IRF9362TRPBF is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, suitable for various power applications.
2. Current Rating: It can handle continuous drain current (I_D) up to 62A, making it ideal for high-current applications.
3. R_DS(on): The device offers a low on-resistance (R_DS(on)) of approximately 9.5 mΩ at V_GS of 10V, ensuring minimal power loss and improved efficiency.
4. Gate Threshold Voltage (V_GS(th)): It has a gate threshold voltage of 1-2.5V, allowing it to be driven effectively with lower gate voltages.
5. Thermal Performance: It features a low thermal resistance, which enhances heat dissipation and reliability.
6. Package: The IRF9362TRPBF comes in a TO-220 package, facilitating easy heat sinking.
These features make the IRF9362TRPBF suitable for applications such as motor drives, power supplies, and DC-DC converters.

Pinout

The IRF9362TRPBF is an N-channel MOSFET with a total of 8 pins. Its primary functions include enabling high-efficiency switching and amplification in various electronic applications. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's operation.
2. Drain (D): The terminal through which the current flows out.
3. Source (S): The terminal through which the current enters.
The other pins are typically associated with the device's packaging and thermal management.
Key specifications include a maximum continuous drain current of 62A, a drain-source voltage (V_DS) rating of 60V, and a low R_DS(on) for efficient conduction. This makes it suitable for power management, motor control, and other applications requiring rapid switching and low power loss. The IRF9362TRPBF is housed in a TO-220 package, facilitating heat dissipation.
Always refer to the manufacturer's datasheet for detailed electrical characteristics and thermal data.

Manufacturer

The IRF9362TRPBF is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon specializes in developing semiconductors and system solutions for various applications, including automotive, industrial power control, and security technologies. The company is known for producing components such as power MOSFETs, microcontrollers, and sensors.
Infineon is headquartered in Neubiberg, Germany, and has a strong presence in the semiconductor market, focusing on innovation and sustainability. They are committed to advancing technologies that improve energy efficiency and enable smarter, more connected systems. The IRF9362TRPBF is a N-channel MOSFET designed for high-performance applications, particularly in power management and conversion circuits.
Infineon's expertise encompasses various sectors, making them a key player in the electronics industry, dedicated to driving technological advancements and supporting the transition to a more energy-efficient future.

Application

The IRF9362TRPBF is a N-channel MOSFET primarily used in various applications such as power management, motor control, and switching power supplies. Its high-speed switching capabilities make it suitable for DC-DC converters and inverters. Additionally, it finds use in automotive systems, LED drivers, and energy-efficient power circuits. The device's low on-resistance (RDS(on)) ensures reduced power loss, enhancing overall efficiency in electronic designs. Its versatility also extends to audio amplifiers and RF amplifiers where high-frequency performance is required.

Package

The IRF9362TRPBF is packaged in a TO-220 form factor, which is a metal can package designed for high-power applications, providing effective heat dissipation.

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