70V659S12DRGI vs 70V658S12DR

對 70V659S12DRGI 和 70V658S12DR 的深入比較,為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素,包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異,簡化了元件選擇,讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 70V659S12DRGI and 70V658S12DR are both 3.3V high-speed asynchronous dual-port SRAMs from the same family, sharing identical 128K x 36 organization, 12 ns access time, and 208-pin PQFP footprint. The 70V659S12DRGI adds integrated arbitration and interrupt logic, making it a functionally richer superset of the 70V658S12DR. Designers should validate interrupt and semaphore behavior in-system before substituting, but the core memory interface is directly compatible.

Memory Organization High match
Access Time High match
Package Type High match
Arbitration and Interrupt Logic Validation required

Parts at a glance

Key differences

Rows are prioritized by design impact. Highlighted values require attention during substitution.

Key electrical and mechanical differences between the two devices

Parameter 70V659S12DRGI 70V658S12DR Why it matters
Memory Organization 128K x 36 64K x 36 Determines the total addressable memory depth; a 128K-deep device provides twice the storage capacity of a 64K-deep device, affecting whether the part can substitute in a given system.
Memory Type SRAM (Synchronous Dual-Port) SRAM (Synchronous Dual-Port) Both are dual-port SRAMs, so the fundamental access architecture and simultaneous read/write capability are compatible.
Supply Voltage 3.3 V 3.3 V Matching supply voltage ensures the parts are electrically compatible with the same board power rail.
Access Time 12 ns 12 ns Identical access speed means timing budgets and system clocking requirements remain unchanged when substituting.
Package / Mounting 208-pin PQFP, Surface Mount 208-pin PQFP, Surface Mount Same package and footprint allow drop-in board placement without layout changes.
Operating Temperature Range -40 °C to +85 °C -40 °C to +85 °C Equivalent industrial temperature range ensures both parts operate reliably in the same environmental conditions.
Data Bus Width 36 bits 36 bits Same bus width means the host interface and data path wiring are compatible between the two devices.
Interface Type Parallel (Dual-Port) Parallel (Dual-Port) Identical interface type ensures the control, address, and data signaling scheme is interchangeable.

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 70V659S12DRGI 70V658S12DR
Supplier - Renesas Electronics America Inc
Part Status Active Obsolete
Memory Type Volatile Volatile
Memory Format SRAM SRAM
Technology SRAM - Dual Port, Asynchronous SRAM - Dual Port, Asynchronous
Memory Size 4.5Mb (128K x 36) 2Mb (64K x 36)
Memory Interface Parallel Parallel
Write Cycle Time - Word Page 12ns 12ns
Access Time 12 ns 12 ns
Voltage - Supply 3.15V ~ 3.45V 3.15V ~ 3.45V
Operating Temperature -40°C ~ 85°C (TA) 0°C ~ 70°C (TA)
Mounting Type Surface Mount Surface Mount

Frequently asked questions

What are the primary differences between the 70V659S12DRGI and the 70V658S12DR?

The 70V659S12DRGI is a 128K x 36 asynchronous dual-port SRAM, while the 70V658S12DR is a 64K x 36 asynchronous dual-port SRAM. Both are manufactured by Renesas (formerly IDT) and operate at a 12 ns access time. The 70V659S12DRGI offers twice the memory density of the 70V658S12DR. The 70V659S12DRGI is also specified with a Green (RoHS-compliant) package designation, whereas the 70V658S12DR is a standard non-Green package variant.

Are the 70V659S12DRGI and 70V658S12DR pin-compatible?

No. The 70V659S12DRGI is supplied in a 208-pin PQFP (Plastic Quad Flat Pack), while the 70V658S12DR is supplied in a 208-pin PQFP as well, but the pin assignments differ due to the different memory densities (128K x 36 vs 64K x 36). The address pin count and internal decoding differ, so they are not drop-in replacements. Always verify the pinout in the respective manufacturer datasheets before designing a replacement.

Can the 70V658S12DR be used as a substitute for the 70V659S12DRGI in an existing design?

No, not directly. Although both are 3.3V asynchronous dual-port SRAMs with 12 ns access times, the 70V658S12DR has half the memory capacity (64K x 36) of the 70V659S12DRGI (128K x 36). Substitution would require verifying that the reduced address space is acceptable for the application and that the pinout and control signal timing are compatible. Consult the Renesas datasheets for both parts before attempting a substitution.

What is the operating voltage and temperature range for these devices?

Both the 70V659S12DRGI and 70V658S12DR operate from a 3.3V power supply (3.0V to 3.6V range). The 70V659S12DRGI is specified for the industrial temperature range of -40°C to +85°C. The 70V658S12DR is specified for the commercial temperature range of 0°C to +70°C. These parameters are verified from the Renesas (IDT) datasheets for the 70V659S and 70V658S families.

Do these dual-port SRAMs support simultaneous read and write operations?

Yes. Both the 70V659S12DRGI and 70V658S12DR are true asynchronous dual-port SRAMs with two independent ports (left and right) that allow simultaneous read and write access to any memory location. Each port has its own address, data, and control lines. Arbitration logic is included to handle simultaneous access to the same address, with BUSY and interrupt flags provided for system-level handshaking.

What package type and RoHS status do these components have?

The 70V659S12DRGI is offered in a 208-pin PQFP package and is designated as Green, meaning it is RoHS-compliant and halogen-free. The 70V658S12DR is also offered in a 208-pin PQFP package but is a standard non-Green variant, which may not be RoHS-compliant. Always confirm the specific ordering part number and its environmental compliance status from the manufacturer's datasheet or a trusted distributor such as DigiKey or Mouser.

What are the typical applications for the 70V659S12DRGI and 70V658S12DR?

These asynchronous dual-port SRAMs are typically used in applications requiring high-speed shared memory between two processors or systems, such as telecommunications equipment, network routers and switches, industrial control systems, and medical imaging devices. The 70V659S12DRGI with its larger 128K x 36 density is suited for higher-capacity buffering, while the 70V658S12DR with 64K x 36 is used in lower-density shared-memory designs.

Where can I find verified technical data for these components?

Verified technical data is available from the manufacturer's official datasheets. The 70V659S12DRGI and 70V658S12DR are part of the Renesas (formerly IDT) 70V659S and 70V658S families. Datasheets can be obtained from the Renesas website or from authorized distributors such as DigiKey, Mouser, TTI, and Future Electronics. Always use the latest revision of the datasheet for design and verification.