Part A
70V659S12DRGI
美國瑞薩電子公司
- Lifecycle
- Active
- Stock
- 1522 件
- Package
- PQFP-208
- Series
- 記憶力
Replacement verdict
Compatible functional replacement candidate
The 70V659S12DRGI and 70V658S10DR are both 3.3V asynchronous dual-port SRAM devices from the same IDT 70V65x family, sharing identical 128K x 36 organization, 3.3V supply, and 208-pin PQFP footprint. The primary functional difference is access speed, with the 70V659S12DRGI rated at 12 ns and the 70V658S10DR at 10 ns. Because the faster 10 ns device can directly substitute for the slower 12 ns device in timing-critical designs, the 70V658S10DR is a viable functional replacement for the 70V659S12DRGI, provided the system timing budget accommodates the faster access cycle.
Memory Organization
High match
Supply Voltage
High match
Package Type
High match
Access Time
Validation required
Parts at a glance
Part B
70V658S10DR
美國瑞薩電子公司
- Lifecycle
- Active
- Stock
- 6871 件
- Package
- BFQFP-208
- Series
- 記憶力
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 70V659S12DRGI | 70V658S10DR | Why it matters |
|---|---|---|---|
| Memory Size | 128 Kbit | 256 Kbit | Memory density determines how much data can be stored; a larger size allows more buffering or storage in the same application. |
| Organization | 8K x 16 | 16K x 16 | Word width and depth must match the system bus and addressing scheme for direct functional substitution. |
| Access Time | 12 ns | 10 ns | Faster access time improves read/write cycle performance and may be required to meet system timing margins. |
| Supply Voltage | 3.3 V | 3.3 V | Both devices must operate at the same supply voltage to be electrically compatible in the target design. |
| Memory Type | SRAM (Dual-Port) | SRAM (Dual-Port) | The memory technology and port configuration must match for the device to serve the same system function. |
| Operating Temperature Range | -40°C to +85°C | -40°C to +85°C | The temperature range must cover the application environment to ensure reliable operation. |
| Package / Mounting Type | Surface Mount | Surface Mount | Package and mounting style must be compatible with the PCB footprint and assembly process. |
| Pin Count | 100 | 100 | Pin count affects footprint compatibility; matching counts simplify board-level substitution. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 70V659S12DRGI | 70V658S10DR |
|---|---|---|
| Supplier | - | Renesas Electronics America Inc |
| Part Status | Active | Obsolete |
| Memory Type | Volatile | Volatile |
| Memory Format | SRAM | SRAM |
| Technology | SRAM - Dual Port, Asynchronous | SRAM - Dual Port, Asynchronous |
| Memory Size | 4.5Mb (128K x 36) | 2Mb (64K x 36) |
| Memory Interface | Parallel | Parallel |
| Write Cycle Time - Word Page | 12ns | 10ns |
| Access Time | 12 ns | 10 ns |
| Voltage - Supply | 3.15V ~ 3.45V | 3.15V ~ 3.45V |
| Operating Temperature | -40°C ~ 85°C (TA) | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the primary differences between the 70V659S12DRGI and the 70V658S10DR?
The 70V659S12DRGI is a 128K x 36 asynchronous dual-port SRAM with a 12 ns access time, while the 70V658S10DR is a 64K x 36 asynchronous dual-port SRAM with a 10 ns access time. The 70V659S12DRGI offers twice the memory density but a slower speed grade compared to the 70V658S10DR.
Are the 70V659S12DRGI and 70V658S10DR pin-to-pin compatible?
No. The 70V659S12DRGI is a 128K x 36 device and the 70V658S10DR is a 64K x 36 device. They have different address pin counts and are not pin-to-pin compatible. The 70V659S12DRGI requires one additional address line (A16) compared to the 70V658S10DR.
What is the operating temperature range for the 70V659S12DRGI and 70V658S10DR?
Both the 70V659S12DRGI and 70V658S10DR are specified for the industrial temperature range of -40°C to +85°C, as indicated by the "I" suffix in their part numbers.
What package type do the 70V659S12DRGI and 70V658S10DR use?
Both devices are offered in a 208-pin Plastic Quad Flatpack (PQFP) package, denoted by the "DR" package code in their part numbers.
Can the 70V658S10DR be used as a drop-in replacement for the 70V659S12DRGI?
No. The 70V658S10DR has half the memory density (64K x 36) of the 70V659S12DRGI (128K x 36) and a different address pin count. A drop-in replacement is not possible without redesigning the memory map and PCB layout.
What are the access times for the 70V659S12DRGI and 70V658S10DR?
The 70V659S12DRGI has a 12 ns access time, while the 70V658S10DR has a 10 ns access time. The 70V658S10DR is the faster of the two devices.
Do the 70V659S12DRGI and 70V658S10DR support simultaneous read and write operations?
Yes. Both are asynchronous dual-port SRAMs designed for simultaneous read and write access from two independent ports, allowing full-duplex operation when addresses do not conflict.
What is the power supply voltage for the 70V659S12DRGI and 70V658S10DR?
Both devices operate from a single 3.3V power supply (3.3V ± 0.3V), as specified in the IDT (now Renesas) 70V659S and 70V658S datasheets.