Part A
70V659S12DRGI
美國瑞薩電子公司
- Lifecycle
- Active
- Stock
- 1522 件
- Package
- PQFP-208
- Series
- 記憶力
Replacement verdict
Compatible functional replacement candidate
The 70V659S12DRGI and 70V657S12DR are both 3.3V synchronous dual-port SRAM devices from the same family with matching 12 ns access time, 3.3V supply, and 208-pin PQFP packaging, making them strong functional replacement candidates. However, the 70V659S12DRGI offers 128K x 36 organization versus 64K x 36 on the 70V657S12DR, so density and addressable memory depth differ. Designers must confirm that the reduced memory depth of the 70V657S12DR is acceptable for the target application before substituting.
Memory Density
Not compatible
Access Time
High match
Supply Voltage
High match
Package Type
High match
Parts at a glance
Part B
70V657S12DR
美國瑞薩電子公司
- Lifecycle
- Active
- Stock
- 8925 件
- Package
- BFQFP-208
- Series
- 記憶力
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 70V659S12DRGI | 70V657S12DR | Why it matters |
|---|---|---|---|
| Memory Size | 128 Kbit | 32 Kbit | Memory density determines how much data can be stored; a larger size allows more data buffering or storage in the same application. |
| Organization | 8K x 16 | 4K x 8 | Word width and depth affect how the memory maps to the system bus and whether it can directly replace another device without glue logic. |
| Access Time | 12 ns | 12 ns | Access time determines the maximum operating speed and whether the device meets the timing requirements of the host processor. |
| Supply Voltage | 3.3 V | 3.3 V | Supply voltage must match the system power rail; a mismatch can cause unreliable operation or require level shifting. |
| Package / Case | 84-pin PGA | 84-pin PGA | Package type and pin count determine physical fit and PCB footprint compatibility for drop-in replacement. |
| Operating Temperature Range | -40°C to +85°C | 0°C to +70°C | The temperature range defines the environments in which the device can reliably operate, affecting suitability for industrial versus commercial use. |
| Memory Type | SRAM (Dual-Port) | SRAM (Dual-Port) | Memory technology affects access behavior, power consumption, and whether the device supports simultaneous read/write operations. |
| Interface | Parallel | Parallel | The interface type must match the host system's bus to ensure proper communication and data transfer. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 70V659S12DRGI | 70V657S12DR |
|---|---|---|
| Supplier | - | Renesas Electronics America Inc |
| Part Status | Active | Obsolete |
| Memory Type | Volatile | Volatile |
| Memory Format | SRAM | SRAM |
| Technology | SRAM - Dual Port, Asynchronous | SRAM - Dual Port, Asynchronous |
| Memory Size | 4.5Mb (128K x 36) | 1.125Mb (32K x 36) |
| Memory Interface | Parallel | Parallel |
| Write Cycle Time - Word Page | 12ns | 12ns |
| Access Time | 12 ns | 12 ns |
| Voltage - Supply | 3.15V ~ 3.45V | 3.15V ~ 3.45V |
| Operating Temperature | -40°C ~ 85°C (TA) | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the primary differences between the 70V659S12DRGI and the 70V657S12DR?
The 70V659S12DRGI is a 128K x 36 asynchronous dual-port SRAM, while the 70V657S12DR is a 32K x 36 asynchronous dual-port SRAM. Both are manufactured by Renesas (formerly IDT) and share the same 12 ns access time, 3.3V supply, and 208-pin PQFP package, but the 70V659S12DRGI offers four times the memory density of the 70V657S12DR.
Are the 70V659S12DRGI and 70V657S12DR pin-compatible?
No. Although both devices use a 208-pin PQFP package, the 70V659S12DRGI (128K x 36) requires additional address pins to support its higher density compared to the 70V657S12DR (32K x 36). The pinouts are not identical, so they cannot be interchanged without verifying the specific pin assignments in the respective datasheets.
Can the 70V657S12DR be used as a drop-in replacement for the 70V659S12DRGI?
No. The 70V657S12DR has a smaller memory capacity (32K x 36) than the 70V659S12DRGI (128K x 36). A drop-in replacement would require identical density, pinout, and functionality. Since the densities and address pin requirements differ, the 70V657S12DR cannot directly replace the 70V659S12DRGI in a design that requires 128K x 36 memory.
What is the access time and operating voltage for both the 70V659S12DRGI and 70V657S12DR?
Both devices feature a 12 ns maximum access time and operate from a 3.3V power supply (with a range typically specified as 3.15V to 3.6V). These parameters are consistent across the 70V659S12DRGI and 70V657S12DR as indicated by the "12" in their part numbers and the standard dual-port SRAM specifications from Renesas.
Do the 70V659S12DRGI and 70V657S12DR support simultaneous read and write operations?
Yes. Both are asynchronous dual-port SRAMs with two independent ports that allow simultaneous read and write access to any memory location. This true dual-port functionality is a core feature of the 70V659S12DRGI and 70V657S12DR, enabling high-speed data sharing between two processors or systems.
What are the operating temperature ranges for the 70V659S12DRGI and 70V657S12DR?
The 70V659S12DRGI is specified for the industrial temperature range of -40°C to +85°C, as indicated by the "I" suffix in its part number. The 70V657S12DR is specified for the commercial temperature range of 0°C to +70°C. This difference makes the 70V659S12DRGI suitable for harsher environments.
Are the 70V659S12DRGI and 70V657S12DR RoHS compliant?
The 70V659S12DRGI is RoHS compliant, as denoted by the "G" suffix in its part number. The 70V657S12DR does not include the "G" suffix and is therefore not RoHS compliant. Designers should consider this difference when selecting parts for applications with environmental compliance requirements.
What is the package type and pin count for the 70V659S12DRGI and 70V657S12DR?
Both devices are offered in a 208-pin Plastic Quad Flat Pack (PQFP) package. The package code "DR" in both part numbers corresponds to this 208-pin PQFP configuration, which is a standard package for high-density dual-port SRAMs from Renesas.