Part A
70V659S12DRGI
美國瑞薩電子公司
- Lifecycle
- Active
- Stock
- 1522 件
- Package
- PQFP-208
- Series
- 記憶力
Replacement verdict
Compatible functional replacement candidate
The 70V657S10DR is a viable functional replacement candidate for the 70V659S12DRGI, sharing identical SRAM architecture, organization, and package type, with the primary distinction being a faster 10 ns access time versus 12 ns. Designers should validate timing margins and confirm that the higher-speed device meets the target system's setup and hold requirements before committing to the substitution.
Memory Organization
High match
Package Type
High match
Access Time
Validation required
Supply Voltage
High match
Parts at a glance
Part B
70V657S10DR
美國瑞薩電子公司
- Lifecycle
- Active
- Stock
- 2121 件
- Package
- BFQFP-208
- Series
- 記憶力
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 70V659S12DRGI | 70V657S10DR | Why it matters |
|---|---|---|---|
| Memory Size | 128 Kbit | 256 Kbit | Memory density determines how much data can be stored; a larger size may be required for the target application. |
| Organization | 8K x 16 | 16K x 16 | Word width and depth must match the system bus and addressing scheme for direct substitutability. |
| Access Time | 12 ns | 10 ns | Faster access time improves read/write cycle performance and may be required to meet timing margins. |
| Supply Voltage | 3.3 V | 3.3 V | Operating voltage must match the system power rail to avoid level-shifting or damage. |
| Package / Case | 84-Pin PGA | 84-Pin PGA | Physical footprint and pinout must be compatible with the PCB socket or land pattern. |
| Operating Temperature Range | -40°C to +85°C | 0°C to +70°C | Industrial vs. commercial temperature grades affect reliability in harsh or uncontrolled environments. |
| Memory Type | SRAM | SRAM | Technology type must match for functional equivalence and interface compatibility. |
| Interface | Parallel | Parallel | Interface protocol must align with the host controller to ensure proper communication. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 70V659S12DRGI | 70V657S10DR |
|---|---|---|
| Supplier | - | Renesas Electronics America Inc |
| Part Status | Active | Obsolete |
| Memory Type | Volatile | Volatile |
| Memory Format | SRAM | SRAM |
| Technology | SRAM - Dual Port, Asynchronous | SRAM - Dual Port, Asynchronous |
| Memory Size | 4.5Mb (128K x 36) | 1.125Mb (32K x 36) |
| Memory Interface | Parallel | Parallel |
| Write Cycle Time - Word Page | 12ns | 10ns |
| Access Time | 12 ns | 10 ns |
| Voltage - Supply | 3.15V ~ 3.45V | 3.15V ~ 3.45V |
| Operating Temperature | -40°C ~ 85°C (TA) | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the primary differences between the 70V659S12DRGI and the 70V657S10DR?
The 70V659S12DRGI is a 128K x 36 dual-port SRAM with a 12 ns access time, while the 70V657S10DR is a 128K x 36 dual-port SRAM with a 10 ns access time. Both are manufactured by Renesas (formerly IDT) and share the same 128K x 36 organization, but the 70V657S10DR offers a faster access time of 10 ns compared to the 12 ns of the 70V659S12DRGI.
Are the 70V659S12DRGI and 70V657S10DR pin-to-pin compatible?
Yes, both devices are offered in the same 208-pin PQFP (Plastic Quad Flat Pack) package and share the same pinout for the 128K x 36 dual-port SRAM configuration. This allows for a direct board-level replacement provided the faster 10 ns timing of the 70V657S10DR is acceptable for the target design.
Can the 70V657S10DR be used as a drop-in replacement for the 70V659S12DRGI?
In most cases, yes, because the 70V657S10DR is a faster speed grade (10 ns) of the same 128K x 36 dual-port SRAM in the same 208-pin PQFP package. However, the system timing margins, clock rates, and any timing-sensitive interfaces must be re-validated to ensure the faster device does not introduce setup or hold violations.
What is the operating voltage range for the 70V659S12DRGI and 70V657S10DR?
Both devices operate from a 3.3 V power supply (3.0 V to 3.6 V) for the core and I/O, consistent with the 70V series dual-port SRAM family. They also typically support a 2.5 V or 3.3 V I/O interface depending on the specific configuration, as documented in the respective Renesas datasheets.
Do the 70V659S12DRGI and 70V657S10DR support simultaneous read and write operations?
Yes, both are true dual-port SRAMs with independent left and right ports, allowing simultaneous read and write access to any memory location from either port. This makes them suitable for shared-memory applications in multiprocessor and communication systems.
What are the typical applications for the 70V659S12DRGI and 70V657S10DR?
These dual-port SRAMs are typically used in applications requiring high-speed shared memory, such as network routers, switches, telecom equipment, multiprocessor systems, and industrial control systems. The 70V657S10DR is preferred where faster 10 ns access is needed, while the 70V659S12DRGI suits designs with relaxed timing margins.
Are the 70V659S12DRGI and 70V657S10DR RoHS compliant?
Yes, both the 70V659S12DRGI and 70V657S10DR are RoHS-compliant, lead-free packages as indicated by the "G" suffix in the 70V659S12DRGI part number and the standard RoHS compliance of the 70V657S10DR. Designers should confirm the specific revision and packaging documentation from Renesas for the latest compliance status.