UJ4C075023K3S

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UJ4C075023K3S

+物料清單

750V/23MOHM, SIC, CASCODE, G4, T

  • 製造商美國iC

  • 製造商部分 #UJ4C075023K3S

  • 有存貨442

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7*24 小時服務保證

90-日售後保障

正品保證

規格

屬性 價值
Supplier UnitedSiC
Package / Case Tube
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 750 V
Current - Continuous Drain(Id) @ 25°C 66A (Tc)
Drive Voltage(Max Rds On Min Rds On) 12V
Rds On(Max) @ Id Vgs 29mOhm @ 40A, 12V
Vgs(th)(Max) @ Id 6V @ 10mA
Gate Charge(Qg)(Max) @ Vgs 37.8 nC @ 15 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1400 pF @ 400 V
Power Dissipation (Max) 306W (Tc)
Operating Temperature -55°C ~ 175°C
Mounting Type Through Hole
Supplier Device Package TO-247-3

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