規格
| 屬性 | 價值 |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Cascode SiCJFET) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 120A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 12V |
| Rds On(Max) @ Id Vgs | 11mOhm @ 100A, 12V |
| Vgs(th)(Max) @ Id | 6V @ 10mA |
| Gate Charge(Qg)(Max) @ Vgs | 234 nC @ 15 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 8512 pF @ 100 V |
| Power Dissipation (Max) | 789W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
概述
Description
The term "UF3SC120009K4S" appears to be a specific model or part number, likely related to a component, device, or product in a technical or industrial field, such as electronics, semiconductors, or manufacturing. Without additional context or industry-specific information, it’s challenging to provide a precise introduction. In general, part numbers like this are used by manufacturers to uniquely identify and catalog their products, ensuring that clients and engineers can accurately specify and order the correct components. To understand more about UF3SC120009K4S, one would typically consult technical datasheets, manufacturer documentation, or contact the supplier directly. These resources would provide detailed specifications, performance characteristics, application guidelines, and other relevant details necessary for integration or use in specific projects.
Equivalent
The UF3SC120009K4S is a 1200V, 9mΩ, SiC MOSFET. Equivalent products include:
1. Wolfspeed C3M0012090J, a 1200V, 11mΩ SiC MOSFET.
2. ON Semiconductor NVHL080N120SC1, a 1200V, 80mΩ SiC MOSFET.
3. ROHM SCT3160KL, a 1200V, 160mΩ SiC MOSFET.
These products have similar voltage ratings and are used in high-efficiency power conversion applications. Specifications such as on-resistance and packaging may vary slightly.
1. Wolfspeed C3M0012090J, a 1200V, 11mΩ SiC MOSFET.
2. ON Semiconductor NVHL080N120SC1, a 1200V, 80mΩ SiC MOSFET.
3. ROHM SCT3160KL, a 1200V, 160mΩ SiC MOSFET.
These products have similar voltage ratings and are used in high-efficiency power conversion applications. Specifications such as on-resistance and packaging may vary slightly.
Features
The UF3SC120009K4S is a silicon carbide (SiC) power MOSFET, typically used in high-efficiency power conversion applications due to its advanced features. Key features include:
1. High Voltage Rating: Typically, devices like this operate at high voltage levels, often around 1200V, making them suitable for high-power applications.
2. Low On-Resistance: SiC MOSFETs are known for their low R_DS(on), which reduces conduction losses and improves efficiency.
3. High-Speed Switching: These devices can switch at higher frequencies than traditional silicon MOSFETs, resulting in reduced switching losses and smaller passive components.
4. Thermal Performance: SiC technology provides better thermal conductivity, allowing for operation at higher temperatures and reducing cooling requirements.
5. Ruggedness and Reliability: SiC MOSFETs typically offer robust performance under extreme conditions, enhancing system reliability.
6. Compact Size: The efficiency and thermal management capabilities allow for more compact designs in power conversion systems.
These features make the UF3SC120009K4S a suitable choice for applications like renewable energy systems, electric vehicle inverters, and industrial power supplies.
1. High Voltage Rating: Typically, devices like this operate at high voltage levels, often around 1200V, making them suitable for high-power applications.
2. Low On-Resistance: SiC MOSFETs are known for their low R_DS(on), which reduces conduction losses and improves efficiency.
3. High-Speed Switching: These devices can switch at higher frequencies than traditional silicon MOSFETs, resulting in reduced switching losses and smaller passive components.
4. Thermal Performance: SiC technology provides better thermal conductivity, allowing for operation at higher temperatures and reducing cooling requirements.
5. Ruggedness and Reliability: SiC MOSFETs typically offer robust performance under extreme conditions, enhancing system reliability.
6. Compact Size: The efficiency and thermal management capabilities allow for more compact designs in power conversion systems.
These features make the UF3SC120009K4S a suitable choice for applications like renewable energy systems, electric vehicle inverters, and industrial power supplies.
Pinout
The UF3SC120009K4S is a silicon carbide (SiC) Schottky diode manufactured by United Silicon Carbide (now part of Qorvo). It is designed for high-efficiency power conversion applications. This particular component is typically used for its fast switching capabilities, high thermal performance, and low forward voltage drop, which are common characteristics of SiC diodes.
The UF3SC120009K4S comes in a TO-247-3L package, which means it has three pins. The pin functions are standard for a diode of this type:
1. Anode: The positive terminal through which current enters the device.
2. Cathode: The negative terminal through which current exits the device.
3. Cathode: The third pin is electrically connected internally to the cathode for improved current handling and thermal performance.
This configuration allows easy integration into circuits where high-efficiency rectification is required, such as in power supplies, inverters, and other power electronics applications.
The UF3SC120009K4S comes in a TO-247-3L package, which means it has three pins. The pin functions are standard for a diode of this type:
1. Anode: The positive terminal through which current enters the device.
2. Cathode: The negative terminal through which current exits the device.
3. Cathode: The third pin is electrically connected internally to the cathode for improved current handling and thermal performance.
This configuration allows easy integration into circuits where high-efficiency rectification is required, such as in power supplies, inverters, and other power electronics applications.
Manufacturer
The UF3SC120009K4S is manufactured by United Silicon Carbide, Inc., which is now part of Qorvo, Inc. United Silicon Carbide, Inc. specializes in the development and production of silicon carbide (SiC) power semiconductors. These semiconductors are used in a variety of applications, including power conversion, renewable energy, and electric vehicles, offering benefits such as higher efficiency, faster switching, and higher temperature operation compared to traditional silicon-based semiconductors.
Qorvo, Inc., the parent company, is a global leader in the technology sector, providing innovative radio frequency (RF) solutions and semiconductors for wireless, wired, and power applications. The company serves a wide range of industries, including telecommunications, defense, and consumer electronics. By integrating United Silicon Carbide, Inc.'s SiC technology, Qorvo enhances its capabilities in delivering advanced power management solutions.
In summary, United Silicon Carbide, Inc. (under Qorvo, Inc.) is a significant player in the semiconductor industry, focusing on cutting-edge silicon carbide technology for various advanced applications.
Qorvo, Inc., the parent company, is a global leader in the technology sector, providing innovative radio frequency (RF) solutions and semiconductors for wireless, wired, and power applications. The company serves a wide range of industries, including telecommunications, defense, and consumer electronics. By integrating United Silicon Carbide, Inc.'s SiC technology, Qorvo enhances its capabilities in delivering advanced power management solutions.
In summary, United Silicon Carbide, Inc. (under Qorvo, Inc.) is a significant player in the semiconductor industry, focusing on cutting-edge silicon carbide technology for various advanced applications.
Application
The UF3SC120009K4S is a silicon carbide (SiC) MOSFET, commonly used in applications that require high efficiency, high power density, and fast switching speeds. Typical application areas include:
1. Power Supplies: Enhances efficiency in AC-DC and DC-DC converters.
2. Electric Vehicles (EVs): Used in inverters, onboard chargers, and powertrain systems.
3. Renewable Energy: Improves performance in solar inverters and wind turbine systems.
4. Industrial Motors: Enhances efficiency and reduces size in motor drives.
5. Telecommunications: Used in power supply units for reliable performance.
6. Aerospace and Defense: Suitable for high-temperature and high-reliability applications.
These applications benefit from the SiC MOSFET's ability to handle high voltages and temperatures while providing efficient power conversion.
1. Power Supplies: Enhances efficiency in AC-DC and DC-DC converters.
2. Electric Vehicles (EVs): Used in inverters, onboard chargers, and powertrain systems.
3. Renewable Energy: Improves performance in solar inverters and wind turbine systems.
4. Industrial Motors: Enhances efficiency and reduces size in motor drives.
5. Telecommunications: Used in power supply units for reliable performance.
6. Aerospace and Defense: Suitable for high-temperature and high-reliability applications.
These applications benefit from the SiC MOSFET's ability to handle high voltages and temperatures while providing efficient power conversion.
Package
The UF3SC120009K4S is a silicon carbide (SiC) power MOSFET by United Silicon Carbide (now part of Qorvo). Its package type is a TO-247-3L, which is a through-hole package commonly used for high-power applications.
