規格
| 屬性 | 價值 |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Cascode SiCJFET) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 65A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 12V |
| Rds On(Max) @ Id Vgs | 45mOhm @ 40A, 12V |
| Vgs(th)(Max) @ Id | 6V @ 10mA |
| Gate Charge(Qg)(Max) @ Vgs | 51 nC @ 15 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 1500 pF @ 100 V |
| Power Dissipation (Max) | 429W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
概述
Description
The UJ3C120040K3S is a silicon carbide (SiC) Schottky barrier diode (SBD) from ROHM Semiconductor. Key features:
- Voltage/Current Rating: 1200V, 40A (forward current).
- Low Forward Voltage (VF): ~1.35V (typ. at 20A), reducing conduction losses.
- Fast Switching: Near-zero reverse recovery time (trr), improving efficiency in high-frequency applications.
- High-Temperature Operation: Stable performance up to 175°C.
Applications: Power supplies, solar inverters, EV chargers, and industrial systems requiring high efficiency and thermal resilience.
Its SiC technology offers superior performance over traditional silicon diodes, particularly in high-voltage, high-temperature environments.
- Voltage/Current Rating: 1200V, 40A (forward current).
- Low Forward Voltage (VF): ~1.35V (typ. at 20A), reducing conduction losses.
- Fast Switching: Near-zero reverse recovery time (trr), improving efficiency in high-frequency applications.
- High-Temperature Operation: Stable performance up to 175°C.
Applications: Power supplies, solar inverters, EV chargers, and industrial systems requiring high efficiency and thermal resilience.
Its SiC technology offers superior performance over traditional silicon diodes, particularly in high-voltage, high-temperature environments.
Equivalent
The UJ3C120040K3S is a 1200V, 40A SiC Schottky diode. Equivalent alternatives include:
- STPSC40H12CW (STMicroelectronics)
- IDH40G120C5 (Infineon)
- C4D40120D (Wolfspeed)
- SDP30S120 (ROHM)
These offer similar voltage/current ratings and SiC Schottky functionality. Verify pinout and thermal specs for compatibility.
- STPSC40H12CW (STMicroelectronics)
- IDH40G120C5 (Infineon)
- C4D40120D (Wolfspeed)
- SDP30S120 (ROHM)
These offer similar voltage/current ratings and SiC Schottky functionality. Verify pinout and thermal specs for compatibility.
Features
The UJ3C120040K3S is a high-performance silicon carbide (SiC) Schottky barrier diode with the following key features:
- Voltage Rating: 1200V
- Current Rating: 40A (continuous)
- Low Forward Voltage Drop: Reduces conduction losses
- Fast Switching: Minimizes switching losses, improving efficiency
- Zero Reverse Recovery Current: Enhances high-frequency performance
- High-Temperature Operation: Reliable up to 175°C
- Robust Construction: Avalanche-rated for rugged applications
Ideal for power supplies, EV chargers, and renewable energy systems.
- Voltage Rating: 1200V
- Current Rating: 40A (continuous)
- Low Forward Voltage Drop: Reduces conduction losses
- Fast Switching: Minimizes switching losses, improving efficiency
- Zero Reverse Recovery Current: Enhances high-frequency performance
- High-Temperature Operation: Reliable up to 175°C
- Robust Construction: Avalanche-rated for rugged applications
Ideal for power supplies, EV chargers, and renewable energy systems.
Pinout
The UJ3C120040K3S is a 1200V, 40A silicon carbide (SiC) Schottky barrier diode (SBD) in a TO-263-3L (D2PAK) package.
- Pin Count: 3 pins (standard D2PAK configuration).
- Functions:
1. Anode (A) – Connected to the positive terminal.
2. Cathode (K) – Connected to the negative terminal.
3. Thermal pad – Enhances heat dissipation (electrically isolated or connected depending on variant).
Designed for high-efficiency, high-frequency applications like power supplies, EV chargers, and solar inverters, it offers low forward voltage drop and fast switching.
- Pin Count: 3 pins (standard D2PAK configuration).
- Functions:
1. Anode (A) – Connected to the positive terminal.
2. Cathode (K) – Connected to the negative terminal.
3. Thermal pad – Enhances heat dissipation (electrically isolated or connected depending on variant).
Designed for high-efficiency, high-frequency applications like power supplies, EV chargers, and solar inverters, it offers low forward voltage drop and fast switching.
Package
The UJ3C120040K3S is a surface-mount (SMD) ceramic capacitor from Taiyo Yuden. It features:
- Package Type: 1206 (3216 metric)
- Capacitance: 40µF
- Voltage Rating: 6.3V
- Temperature Stability: X5R dielectric
- Lead-Free & RoHS Compliant
Compact and reliable, it’s suited for decoupling and filtering in high-density circuits.
- Package Type: 1206 (3216 metric)
- Capacitance: 40µF
- Voltage Rating: 6.3V
- Temperature Stability: X5R dielectric
- Lead-Free & RoHS Compliant
Compact and reliable, it’s suited for decoupling and filtering in high-density circuits.
