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STP25NM60ND
+物料清單MOSFET N-CH 600V 21A TO220AB
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製造商意法半導體
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製造商部分 #STP25NM60ND
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規格
| 屬性 | 價值 |
| Series | FDmesh™ II |
| PartStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 21A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 160mOhm @ 10.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 80 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2400 pF @ 50 V |
| PowerDissipation(Max) | 160W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
| Package/Case | TO-220-3 |
| BaseProductNumber | STP25N |
概述
Description
This MOSFET is typically used in various applications, including switch-mode power supplies (SMPS), motor drivers, and inverters for renewable energy systems. Its fast switching capabilities make it ideal for efficient power conversion.
The STP25NM60ND is packaged in a TO-220 casing, ensuring effective thermal management. It is also designed to handle high temperatures, making it resilient in demanding environments. Overall, it is a reliable component for electronic designs requiring robust performance and efficiency in power applications.
Equivalent
Features
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The device supports a continuous drain current (I_D) of up to 25A, enabling it to manage significant loads.
3. R_DS(on): It has a low on-resistance (typically around 0.25 ohms), which minimizes power losses during operation.
4. Gate Threshold Voltage (V_GS(th)): The gate-source threshold voltage ranges from 2V to 4V, allowing for better control in switching applications.
5. Fast Switching: The STP25NM60ND provides fast switching capabilities, enhancing efficiency in power conversion applications.
6. Package: It is available in a TO-220 package, providing good thermal management and ease of mounting.
These features make the STP25NM60ND suitable for applications in switch-mode power supplies, motor drivers, and other high-efficiency power circuits.
Pinout
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The terminal where the current flows out when the device is conducting.
3. Source (S): The terminal through which current enters the MOSFET.
The device is designed for high-efficiency power switching applications and can handle up to 25A with a maximum drain-source voltage of 600V. Its low on-resistance and fast switching capabilities make it suitable for various applications, including power supplies and motor control.
Manufacturer
Application
1. Switching Power Supplies: Used in converters and inverters for efficient power management.
2. Motor Control: Ideal for driving motors in industrial and automotive applications.
3. LED Drivers: Utilized in lighting applications for energy-efficient control.
4. High-Frequency Applications: Suitable for RF amplifiers and other high-frequency circuits.
5. Power Management Circuits: Effective in battery management and energy conversion systems.
Its high efficiency and thermal performance make it versatile across various electronic devices.