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STW77N65M5
+物料清單MOSFET N-CH 650V 69A TO247-3
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製造商意法半導體
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製造商部分 #STW77N65M5
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規格
| 屬性 | 價值 |
| Series | MDmesh™ V |
| Part Status | Active |
| Base Product Number | STW77 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 69A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 34.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Vgs (Max) | 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 9800 pF @ 100 V |
| Power Dissipation (Max) | 400W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package | TO-247-3 |
| Packaging | Tube |
概述
Description
The STW77N65M5 is a 650V, 77A N-channel MOSFET from STMicroelectronics, designed for high-power applications like switching power supplies, motor drives, and inverters. Key features include:
- Low on-resistance (RDS(on)): 35 mΩ (max) at 10V, reducing conduction losses.
- Fast switching: Optimized for efficiency in high-frequency circuits.
- Avalanche ruggedness: Enhanced reliability under high-voltage stress.
- TO-247 package: Robust thermal performance for heat dissipation.
Ideal for industrial and automotive systems, it balances performance with durability. For detailed specs, refer to the datasheet.
- Low on-resistance (RDS(on)): 35 mΩ (max) at 10V, reducing conduction losses.
- Fast switching: Optimized for efficiency in high-frequency circuits.
- Avalanche ruggedness: Enhanced reliability under high-voltage stress.
- TO-247 package: Robust thermal performance for heat dissipation.
Ideal for industrial and automotive systems, it balances performance with durability. For detailed specs, refer to the datasheet.
Features
The STW77N65M5 is an N-channel MOSFET with the following key features:
- Voltage Rating: 650V
- Current Rating: 77A (continuous)
- Low On-Resistance (RDS(on)): 42mΩ (max) @ 10V VGS
- Fast Switching: Optimized for high efficiency
- Avalanche Energy Rated: Robust against voltage spikes
- Package: TO-247 (3-pin) for high-power applications
- Applications: Used in power supplies, motor drives, and inverters
It offers high current handling, low conduction losses, and strong thermal performance.
- Voltage Rating: 650V
- Current Rating: 77A (continuous)
- Low On-Resistance (RDS(on)): 42mΩ (max) @ 10V VGS
- Fast Switching: Optimized for high efficiency
- Avalanche Energy Rated: Robust against voltage spikes
- Package: TO-247 (3-pin) for high-power applications
- Applications: Used in power supplies, motor drives, and inverters
It offers high current handling, low conduction losses, and strong thermal performance.
Pinout
The STW77N65M5 is a N-channel MOSFET with the following key specifications:
- Pin Count: 3 (TO-247 package)
- Gate (G): Controls switching
- Drain (D): High-voltage terminal
- Source (S): Ground/reference terminal
- Function:
- Voltage Rating: 650V
- Current Rating: 77A (max)
- Low On-Resistance (RDS(on)): 42mΩ (typ)
- Applications: High-power switching (e.g., motor drives, inverters, power supplies).
Designed for efficiency in high-voltage circuits, it features fast switching and low conduction losses.
- Pin Count: 3 (TO-247 package)
- Gate (G): Controls switching
- Drain (D): High-voltage terminal
- Source (S): Ground/reference terminal
- Function:
- Voltage Rating: 650V
- Current Rating: 77A (max)
- Low On-Resistance (RDS(on)): 42mΩ (typ)
- Applications: High-power switching (e.g., motor drives, inverters, power supplies).
Designed for efficiency in high-voltage circuits, it features fast switching and low conduction losses.
Package
The STW77N65M5 is a Power MOSFET in a TO-247 package. This package type is designed for high-power applications, offering excellent thermal performance and mechanical strength. It features three leads and is commonly used in switching power supplies, motor drives, and other high-current circuits. The TO-247's robust design ensures efficient heat dissipation, making it suitable for demanding environments.
