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MOSFET 2N-CH 20V 4.5A SC70-6
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製造商矽尼克斯
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製造商部分 #SIA906EDJ-T1-GE3
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有存貨24253
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90-日售後保障
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規格
| 屬性 | 價值 |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 4.5A |
| Rds On(Max) @ Id Vgs | 46mOhm @ 3.9A, 4.5V |
| Vgs(th)(Max) @ Id | 1.4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 12nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 350pF @ 10V |
| Power - Max | 7.8W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概述
Description
The SIA906EDJ-T1-GE3 is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Vishay Siliconix. It is designed for use in various electronic applications, particularly where efficient power management is crucial. This component is part of Vishay’s line of power MOSFETs and is typically used for switching and amplifying electronic signals in circuits.
Key features of the SIA906EDJ-T1-GE3 include low on-resistance, which minimizes power losses and improves efficiency, and a compact design suitable for space-constrained applications. It is often used in consumer electronics, automotive, and industrial applications, where reliable and efficient power switching is needed. The device is designed to handle a specific range of voltage and current, making it ideal for particular types of electronic designs.
The SIA906EDJ-T1-GE3 is also known for its robustness in thermal management, which enhances its performance and longevity in demanding environments. This makes it a valuable component for engineers looking to optimize power efficiency in their designs.
Key features of the SIA906EDJ-T1-GE3 include low on-resistance, which minimizes power losses and improves efficiency, and a compact design suitable for space-constrained applications. It is often used in consumer electronics, automotive, and industrial applications, where reliable and efficient power switching is needed. The device is designed to handle a specific range of voltage and current, making it ideal for particular types of electronic designs.
The SIA906EDJ-T1-GE3 is also known for its robustness in thermal management, which enhances its performance and longevity in demanding environments. This makes it a valuable component for engineers looking to optimize power efficiency in their designs.
Equivalent
The SIA906EDJ-T1-GE3 is a power MOSFET produced by Vishay. Equivalent products may include:
1. Nexperia's PSMN0R9-25YLD,
2. Infineon's BSZ042N06LS5,
3. ON Semiconductor's NTMFS5C604NL,
4. STMicroelectronics' STL140N6F7, and
5. Texas Instruments' CSD18541F5.
Ensure compatibility by checking the datasheets for exact specifications such as voltage rating, current capacity, and package type.
1. Nexperia's PSMN0R9-25YLD,
2. Infineon's BSZ042N06LS5,
3. ON Semiconductor's NTMFS5C604NL,
4. STMicroelectronics' STL140N6F7, and
5. Texas Instruments' CSD18541F5.
Ensure compatibility by checking the datasheets for exact specifications such as voltage rating, current capacity, and package type.
Features
The SIA906EDJ-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix. Key features include:
1. Dual Transistors: It houses two N-channel MOSFETs in a single package, optimizing board space.
2. Compact Package: Available in a PowerPAK® SC-70 package, offering a small footprint.
3. Low On-Resistance: Features low RDS(on) to reduce power loss and improve efficiency.
4. High Current Capability: Can handle significant current, suitable for power management applications.
5. Fast Switching Speed: Enhances overall system performance with quick response times.
6. Thermal Performance: PowerPAK® packaging ensures efficient thermal performance.
7. Applications: Ideal for use in DC-DC converters, load switches, and power management in portable and handheld devices.
These features make the SIA906EDJ-T1-GE3 suitable for high-efficiency and space-constrained applications.
1. Dual Transistors: It houses two N-channel MOSFETs in a single package, optimizing board space.
2. Compact Package: Available in a PowerPAK® SC-70 package, offering a small footprint.
3. Low On-Resistance: Features low RDS(on) to reduce power loss and improve efficiency.
4. High Current Capability: Can handle significant current, suitable for power management applications.
5. Fast Switching Speed: Enhances overall system performance with quick response times.
6. Thermal Performance: PowerPAK® packaging ensures efficient thermal performance.
7. Applications: Ideal for use in DC-DC converters, load switches, and power management in portable and handheld devices.
These features make the SIA906EDJ-T1-GE3 suitable for high-efficiency and space-constrained applications.
Pinout
The SIA906EDJ-T1-GE3 is a power MOSFET produced by Vishay Siliconix. It is important to note that Vishay products often have detailed datasheets specifying the pin count and functions. However, the SIA906EDJ-T1-GE3 is typically housed in a PowerPAK SC-70 package, which generally comes with a 6-pin configuration.
As a MOSFET, its primary function is to switch electronic signals and power in various applications, including power management, load switching, and similar functions. The pins in such a configuration usually include the gate, drain, and source terminals, which are essential for the operation of the MOSFET. Additionally, there may be multiple pins for the drain and source to allow for higher current handling and better thermal performance, a common practice in power MOSFET designs.
For precise pin functions and detailed specifications, you should refer to the specific datasheet provided by Vishay for the SIA906EDJ-T1-GE3.
As a MOSFET, its primary function is to switch electronic signals and power in various applications, including power management, load switching, and similar functions. The pins in such a configuration usually include the gate, drain, and source terminals, which are essential for the operation of the MOSFET. Additionally, there may be multiple pins for the drain and source to allow for higher current handling and better thermal performance, a common practice in power MOSFET designs.
For precise pin functions and detailed specifications, you should refer to the specific datasheet provided by Vishay for the SIA906EDJ-T1-GE3.
Manufacturer
The SIA906EDJ-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is an American company that specializes in the production of discrete semiconductors and passive electronic components. Founded in 1962, Vishay is known for its wide range of products including resistors, capacitors, inductors, diodes, and transistors. The company serves various industries such as automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical. Vishay's components are integral to the functioning of electronic circuits, providing essential functions such as signal processing, power management, and connectivity. With a strong global presence, Vishay is recognized as a leading supplier in the electronic components industry.
Application
The SIA906EDJ-T1-GE3 is a MOSFET transistor commonly used in various electronic applications. It is typically applied in power management systems, including DC-DC converters, power supply units, and battery management systems. Additionally, it is suitable for use in motor control circuits, lighting systems, and load switches. Its design allows for efficient power handling and fast switching, making it ideal for applications requiring high efficiency and reliability.
Package
The SIA906EDJ-T1-GE3 is a type of power MOSFET typically packaged in a DPAK (TO-252) configuration. This surface-mount package is designed for high-efficiency power switching applications, providing robust thermal performance and efficient heat dissipation.
