規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 2.4A |
| RdsOn(Max)@IdVgs | 120mOhm @ 3.1A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 22nC @ 10V |
| Power-Max | 1.4W |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概述
Equivalent
Equivalent products to the SI4948BEY-T1-E3 (dual P-channel MOSFET) include:
- AO4425 (AOS)
- FDS4435BZ (ON Semiconductor)
- IRF7416PBF (Infineon)
- NDS4435P (Fairchild/ON Semi)
These alternatives offer similar specifications (e.g., -30V, -8A, low RDS(on)). Verify pin compatibility and electrical characteristics for your application.
- AO4425 (AOS)
- FDS4435BZ (ON Semiconductor)
- IRF7416PBF (Infineon)
- NDS4435P (Fairchild/ON Semi)
These alternatives offer similar specifications (e.g., -30V, -8A, low RDS(on)). Verify pin compatibility and electrical characteristics for your application.
Pinout
The SI4948BEY-T1-E3 is a dual N-channel MOSFET in a PowerPAK® SO-8 package.
- Pin Count: 8 pins (SO-8 footprint).
- Function:
- Two independent N-channel MOSFETs (Dual configuration).
- Designed for high-efficiency power switching (e.g., DC-DC converters, motor control).
- Low RDS(on) for reduced conduction losses.
- Logic-level gate drive (compatible with 3.3V/5V signals).
- Common drain configuration (pins 5,6,7,8 are drains; gates and sources are separate).
Key Applications:
- Power management in portable devices.
- Load switching, battery protection.
- Pin Count: 8 pins (SO-8 footprint).
- Function:
- Two independent N-channel MOSFETs (Dual configuration).
- Designed for high-efficiency power switching (e.g., DC-DC converters, motor control).
- Low RDS(on) for reduced conduction losses.
- Logic-level gate drive (compatible with 3.3V/5V signals).
- Common drain configuration (pins 5,6,7,8 are drains; gates and sources are separate).
Key Applications:
- Power management in portable devices.
- Load switching, battery protection.
Application
The SI4948BEY-T1-E3 is a dual N-channel MOSFET used in various power management applications. Key areas include:
- DC-DC Converters: Efficient voltage regulation in power supplies.
- Motor Control: Driving small motors in automotive and industrial systems.
- Load Switching: Power distribution in portable devices (e.g., smartphones, tablets).
- Battery Management: Protection circuits in rechargeable battery systems.
- Automotive Electronics: Used in infotainment, lighting, and powertrain controls.
Its low on-resistance and compact package make it ideal for space-constrained, high-efficiency designs.
- DC-DC Converters: Efficient voltage regulation in power supplies.
- Motor Control: Driving small motors in automotive and industrial systems.
- Load Switching: Power distribution in portable devices (e.g., smartphones, tablets).
- Battery Management: Protection circuits in rechargeable battery systems.
- Automotive Electronics: Used in infotainment, lighting, and powertrain controls.
Its low on-resistance and compact package make it ideal for space-constrained, high-efficiency designs.
Package
The SI4948BEY-T1-E3 is a dual N-channel MOSFET in a PowerPAK® SO-8 package. This compact surface-mount package offers efficient thermal performance and is designed for high-power applications. It features a small footprint (5mm x 6mm) with exposed pads for improved heat dissipation, making it suitable for power management in space-constrained designs.
