SI4966DY-T1-GE3

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SI4966DY-T1-GE3

+物料清單

MOSFET 2N-CH 20V 8SOIC

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正品保證

規格

屬性 價值
Supplier Vishay Siliconix
Package / Case Tape & Reel (TR)
Series TrenchFET®
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Rds On(Max) @ Id Vgs 25mOhm @ 7.1A, 4.5V
Vgs(th)(Max) @ Id 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 50nC @ 4.5V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

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