SCT040W65G3-4AG

圖片僅供參考

SCT040W65G3-4AG

+物料清單

AUTOMOTIVE-GRADE SILICON CARBIDE

  • 製造商意法半導體

  • 製造商部分 #SCT040W65G3-4AG

  • 有存貨17978

365 天品質保證

7*24 小時服務保證

90-日售後保障

正品保證

規格

屬性 價值
Part Status Active
Base Product Number SCT040
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 63mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 4.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 37.5 nC @ 18 V
Vgs (Max) +18V, -5V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 400 V
Power Dissipation (Max) 240W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4
Packaging Tube

與SCT040W65G3-4AG相關的產品