圖片僅供參考
P3M06300T3
+物料清單SICFET N-CH 650V 9A TO-220-3
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製造商PN結電晶體
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製造商部分 #P3M06300T3
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有存貨8748
365 天品質保證
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90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Supplier | PN Junction Semiconductor |
| Package | Tube |
| Series | P3M |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 9A |
| DriveVoltage(MaxRdsOnMinRdsOn) | 15V |
| RdsOn(Max)@IdVgs | 500mOhm @ 4.5A, 15V |
| Vgs(th)(Max)@Id | 2.2V @ 5mA |
| Vgs(Max) | +20V, -8V |
| PowerDissipation(Max) | 35W |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220-2L |
