圖片僅供參考
P3M06300K3
+物料清單SICFET N-CH 650V 9A TO-247-3
-
製造商PN結電晶體
-
製造商部分 #P3M06300K3
-
有存貨1
365 天品質保證
7*24 小時服務保證
90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Supplier | PN Junction Semiconductor |
| Package / Case | Tube |
| Series | P3M |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 9A |
| Drive Voltage(Max Rds On Min Rds On) | 15V |
| Rds On(Max) @ Id Vgs | 500mOhm @ 4.5A, 15V |
| Vgs(th)(Max) @ Id | 2.2V @ 5mA (Typ) |
| Gate Charge(Qg)(Max) @ Vgs | 904 nC @ 15 V |
| Vgs(Max) | +20V, -8V |
| Input Capacitance(Ciss)(Max) @ Vds | 338 pF @ 400 V |
| Power Dissipation (Max) | 38W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3L |
