圖片僅供參考
P3M06120T3
+物料清單SICFET N-CH 650V 29A TO-220-3
-
製造商PN結電晶體
-
製造商部分 #P3M06120T3
-
有存貨10
365 天品質保證
7*24 小時服務保證
90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Supplier | PN Junction Semiconductor |
| Package | Tube |
| Series | P3M |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 29A |
| DriveVoltage(MaxRdsOnMinRdsOn) | 15V |
| RdsOn(Max)@IdVgs | 158mOhm @ 10A, 15V |
| Vgs(th)(Max)@Id | 2.2V @ 5mA (Typ) |
| Vgs(Max) | +20V, -8V |
| PowerDissipation(Max) | 153W |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220-2L |
