規格
| 屬性 | 價值 |
| Package / Case | Tray |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | RAM |
| Technology | MRAM (Magnetoresistive RAM) |
| Memory Size | 4Mb (256K x 16) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 35ns |
| Access Time | 35 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Mounting Type | Surface Mount |
概述
Description
"MR2A16AVYS35" refers to a specific model of magnetoresistive random-access memory (MRAM) produced by Everspin Technologies. MRAM is a type of non-volatile memory that uses magnetic storage elements instead of electrical charges or current flows. The MR2A16AVYS35 model is part of Everspin’s MRAM product line, known for its high-speed read and write capabilities, durability, and ability to retain data without power.
This model is designed for applications requiring reliable storage with fast access times and high endurance. MRAM's advantages include resistance to radiation, making it suitable for aerospace and military applications, and high data retention without the need for refresh cycles, unlike traditional DRAM. The MR2A16AVYS35 typically features a parallel interface and comes in various densities, making it versatile for different hardware designs. Its robust design and performance make it a popular choice for industrial, automotive, and embedded systems where data integrity and speed are crucial.
This model is designed for applications requiring reliable storage with fast access times and high endurance. MRAM's advantages include resistance to radiation, making it suitable for aerospace and military applications, and high data retention without the need for refresh cycles, unlike traditional DRAM. The MR2A16AVYS35 typically features a parallel interface and comes in various densities, making it versatile for different hardware designs. Its robust design and performance make it a popular choice for industrial, automotive, and embedded systems where data integrity and speed are crucial.
Equivalent
The MR2A16AVYS35 is a 4Mb Magnetoresistive RAM (MRAM) chip. Equivalent products include the Everspin MR2A16AMYS35, which is also a 4Mb MRAM with similar specifications. Alternatives could include products from other manufacturers like NVE's MRAM chips or Avalanche Technology's MRAM offerings, but make sure to verify compatibility in terms of pin configuration, memory architecture, and performance to ensure they meet your specific application requirements.
Features
The MR2A16AVYS35 is a non-volatile magnetoresistive random-access memory (MRAM) device. Key features include:
1. Memory Organization: 4 Megabit (512K x 8) memory configuration.
2. Non-Volatile: Retains data without power, ensuring data integrity even during power loss.
3. High-Speed Access: Typically offers read and write cycle times comparable to SRAM, allowing for fast data retrieval and storage.
4. Unlimited Endurance: Supports an unlimited number of read and write cycles, making it highly durable for applications requiring frequent data updates.
5. Data Retention: Provides long-term data retention capabilities, often exceeding several years.
6. Low Power Consumption: Operates efficiently in terms of power usage, suitable for battery-powered applications.
7. Standard SRAM Interface: Designed with a standard SRAM pin configuration, facilitating easy integration into existing systems.
8. Wide Operating Temperature Range: Suitable for operation in varied environmental conditions, typically from -40°C to +85°C.
These features make the MR2A16AVYS35 a reliable choice for applications demanding high-speed, non-volatile memory with robust endurance and energy efficiency.
1. Memory Organization: 4 Megabit (512K x 8) memory configuration.
2. Non-Volatile: Retains data without power, ensuring data integrity even during power loss.
3. High-Speed Access: Typically offers read and write cycle times comparable to SRAM, allowing for fast data retrieval and storage.
4. Unlimited Endurance: Supports an unlimited number of read and write cycles, making it highly durable for applications requiring frequent data updates.
5. Data Retention: Provides long-term data retention capabilities, often exceeding several years.
6. Low Power Consumption: Operates efficiently in terms of power usage, suitable for battery-powered applications.
7. Standard SRAM Interface: Designed with a standard SRAM pin configuration, facilitating easy integration into existing systems.
8. Wide Operating Temperature Range: Suitable for operation in varied environmental conditions, typically from -40°C to +85°C.
These features make the MR2A16AVYS35 a reliable choice for applications demanding high-speed, non-volatile memory with robust endurance and energy efficiency.
Pinout
The MR2A16AVYS35 is a magnetoresistive random-access memory (MRAM) chip. It typically comes in a standard 48-pin TSOP (Thin Small Outline Package) configuration. The memory is organized as 128K x 16 bits, providing a total of 2 megabits of storage.
The primary function of the MR2A16AVYS35 is to offer non-volatile memory storage with the speed of SRAM. It retains data without power and provides unlimited read and write cycles with fast access times. Key features include data retention upon power loss and robust endurance, making it suitable for applications that require persistent storage with high-speed access and reliability.
The pin functions generally include address pins, data pins, control pins (such as Chip Enable, Write Enable, and Output Enable), and power supply pins.
The primary function of the MR2A16AVYS35 is to offer non-volatile memory storage with the speed of SRAM. It retains data without power and provides unlimited read and write cycles with fast access times. Key features include data retention upon power loss and robust endurance, making it suitable for applications that require persistent storage with high-speed access and reliability.
The pin functions generally include address pins, data pins, control pins (such as Chip Enable, Write Enable, and Output Enable), and power supply pins.
Manufacturer
The MR2A16AVYS35 is manufactured by Everspin Technologies, Inc. Everspin is a company that specializes in developing and providing magnetoresistive random-access memory (MRAM) solutions, which are non-volatile memory products used in various applications for their speed and endurance. Everspin is known for its innovation in MRAM technology and caters to markets such as industrial, automotive, and data center applications.
Application
The MR2A16AVYS35 is a magnetoresistive random-access memory (MRAM) chip. Its application areas include:
1. Automotive Systems: Used in engine control units and infotainment systems due to its reliability and non-volatility.
2. Industrial Automation: Suitable for programmable logic controllers (PLCs) and robotics where data retention is critical.
3. Aerospace and Defense: Employed in avionics and mission-critical systems for its robustness and resilience to radiation.
4. Medical Devices: Utilized in devices like pacemakers and medical monitors for its low power consumption and data reliability.
5. Consumer Electronics: Found in solid-state drives (SSDs) and other devices requiring fast write and read speeds.
MRAM's non-volatile nature, speed, and durability make it suitable across these diverse fields.
1. Automotive Systems: Used in engine control units and infotainment systems due to its reliability and non-volatility.
2. Industrial Automation: Suitable for programmable logic controllers (PLCs) and robotics where data retention is critical.
3. Aerospace and Defense: Employed in avionics and mission-critical systems for its robustness and resilience to radiation.
4. Medical Devices: Utilized in devices like pacemakers and medical monitors for its low power consumption and data reliability.
5. Consumer Electronics: Found in solid-state drives (SSDs) and other devices requiring fast write and read speeds.
MRAM's non-volatile nature, speed, and durability make it suitable across these diverse fields.
Package
The MR2A16AVYS35 is a magnetoresistive random-access memory (MRAM) device from Everspin Technologies. It typically comes in a 48-ball fine-pitch ball grid array (FBGA) package. This type of packaging supports high-density memory devices and provides efficient electrical performance and thermal characteristics.
