規格
| 屬性 | 價值 |
| Package / Case | Tray |
| Part Status | Not For New Designs |
| Memory Type | Non-Volatile |
| Memory Format | RAM |
| Technology | MRAM (Magnetoresistive RAM) |
| Memory Size | 256Kb (32K x 8) |
| Memory Interface | SPI |
| Clock Frequency | 40 MHz |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
概述
Description
The MR25H256CDF is a non-volatile magnetoresistive random-access memory (MRAM) chip, offering 256 kilobits of storage. It combines the speed of SRAM with the non-volatility of flash memory, making it ideal for applications requiring fast data access and long-term data retention. Typical uses include industrial, automotive, and consumer electronics, where reliable and fast memory is crucial.
Key features include a standard SPI interface for easy integration, high endurance with nearly unlimited read/write cycles, and data retention capabilities up to 20 years. Its operation over a wide temperature range enhances its suitability for demanding environments. The MR25H256CDF is also known for its low power consumption, which is beneficial for battery-powered applications.
Additionally, MRAM technology is inherently radiation-hard, making the MR25H256CDF a reliable choice for aerospace and military applications. Overall, this chip provides a robust memory solution with the benefits of both speed and stability, ideal for modern electronic devices requiring reliable and efficient memory performance.
Key features include a standard SPI interface for easy integration, high endurance with nearly unlimited read/write cycles, and data retention capabilities up to 20 years. Its operation over a wide temperature range enhances its suitability for demanding environments. The MR25H256CDF is also known for its low power consumption, which is beneficial for battery-powered applications.
Additionally, MRAM technology is inherently radiation-hard, making the MR25H256CDF a reliable choice for aerospace and military applications. Overall, this chip provides a robust memory solution with the benefits of both speed and stability, ideal for modern electronic devices requiring reliable and efficient memory performance.
Equivalent
The MR25H256CDF is a magnetoresistive random-access memory (MRAM) chip. Equivalent or similar products include:
1. Everspin's MR25H256ACDF - another MRAM with similar specifications.
2. N25Q256A - a 256 Mb Serial Flash Memory from Micron.
3. STMicroelectronics M95M02-DR - a 2-Mbit serial SPI bus EEPROM.
4. Cypress FM25V02A - a 256Kb FRAM with SPI interface.
These alternatives might differ slightly in interface or specific features but offer comparable non-volatile memory solutions.
1. Everspin's MR25H256ACDF - another MRAM with similar specifications.
2. N25Q256A - a 256 Mb Serial Flash Memory from Micron.
3. STMicroelectronics M95M02-DR - a 2-Mbit serial SPI bus EEPROM.
4. Cypress FM25V02A - a 256Kb FRAM with SPI interface.
These alternatives might differ slightly in interface or specific features but offer comparable non-volatile memory solutions.
Features
The MR25H256CDF is a magnetoresistive random-access memory (MRAM) chip that offers several key features:
1. Capacity: It provides a storage capacity of 256 kilobits.
2. Interface: The chip utilizes a Serial Peripheral Interface (SPI), supporting both standard and high-speed modes for data communication.
3. Non-volatility: MRAM is non-volatile, meaning it retains data without power, combining the speed of RAM with the persistence of flash memory.
4. Speed: It offers fast read and write speeds with no write delays or wear leveling required, enhancing performance in various applications.
5. Endurance: The MR25H256CDF has virtually unlimited read/write cycles, making it highly durable for frequent data access and modifications.
6. Low Power Consumption: It operates with low power, which is ideal for battery-powered and energy-efficient applications.
7. Data Retention: The chip ensures long-term data retention, typically up to 20 years, making it reliable for critical data storage needs.
8. Operating Voltage: Supports a wide operating voltage range, typically from 2.7V to 3.6V, ensuring flexibility in different electronic designs.
1. Capacity: It provides a storage capacity of 256 kilobits.
2. Interface: The chip utilizes a Serial Peripheral Interface (SPI), supporting both standard and high-speed modes for data communication.
3. Non-volatility: MRAM is non-volatile, meaning it retains data without power, combining the speed of RAM with the persistence of flash memory.
4. Speed: It offers fast read and write speeds with no write delays or wear leveling required, enhancing performance in various applications.
5. Endurance: The MR25H256CDF has virtually unlimited read/write cycles, making it highly durable for frequent data access and modifications.
6. Low Power Consumption: It operates with low power, which is ideal for battery-powered and energy-efficient applications.
7. Data Retention: The chip ensures long-term data retention, typically up to 20 years, making it reliable for critical data storage needs.
8. Operating Voltage: Supports a wide operating voltage range, typically from 2.7V to 3.6V, ensuring flexibility in different electronic designs.
Pinout
The MR25H256CDF is a magnetoresistive random-access memory (MRAM) device. It typically comes in an 8-pin configuration. Here is a brief rundown of its pin functions:
1. CS (Chip Select): Activates the device when low, enabling communication.
2. SO/SIO (Serial Data Output/Single I/O): Outputs data to the host during read operations.
3. WP (Write Protect): Protects the memory contents from being altered when low.
4. VSS (Ground): Connects to the system ground.
5. SI/SIO (Serial Data Input/Single I/O): Inputs data from the host during write operations.
6. SCK (Serial Clock): Provides the clock signal for data transfer.
7. HOLD: Temporarily pauses communication without deselecting the device when low.
8. VDD (Power Supply): Supplies the necessary voltage to the device.
The MR25H256CDF is used for applications requiring non-volatile memory with fast write and read capabilities. It is ideal for environments where data integrity and retention are crucial, such as industrial and automotive sectors.
1. CS (Chip Select): Activates the device when low, enabling communication.
2. SO/SIO (Serial Data Output/Single I/O): Outputs data to the host during read operations.
3. WP (Write Protect): Protects the memory contents from being altered when low.
4. VSS (Ground): Connects to the system ground.
5. SI/SIO (Serial Data Input/Single I/O): Inputs data from the host during write operations.
6. SCK (Serial Clock): Provides the clock signal for data transfer.
7. HOLD: Temporarily pauses communication without deselecting the device when low.
8. VDD (Power Supply): Supplies the necessary voltage to the device.
The MR25H256CDF is used for applications requiring non-volatile memory with fast write and read capabilities. It is ideal for environments where data integrity and retention are crucial, such as industrial and automotive sectors.
Manufacturer
The MR25H256CDF is manufactured by Everspin Technologies. Everspin is a company that specializes in the development and production of Magnetoresistive Random Access Memory (MRAM) products. MRAM is a type of non-volatile memory that leverages magnetic states to store data, allowing it to retain information without power. Everspin is known for its innovation in this field, providing solutions that offer high speed, endurance, and reliability for industrial, automotive, and data center applications. The company plays a significant role in advancing memory technology with its focus on scalable MRAM solutions.
Application
The MR25H256CDF is a non-volatile magnetoresistive random-access memory (MRAM) chip with a capacity of 256Kb. Its application areas include:
1. Industrial Automation: Used in control systems for data logging and configuration storage due to its fast write speeds and durability.
2. Automotive Systems: Suitable for engine control units and infotainment systems where data integrity and reliability are crucial.
3. Consumer Electronics: Employed in devices requiring quick data retrieval and low power consumption.
4. Medical Devices: Provides reliable data storage for critical health monitoring equipment.
5. IoT Devices: Ideal for edge devices needing persistent memory with low latency.
6. Energy Management: Used in smart meters and other energy-efficient systems for real-time data storage.
These applications leverage MRAM’s speed, endurance, and non-volatility.
1. Industrial Automation: Used in control systems for data logging and configuration storage due to its fast write speeds and durability.
2. Automotive Systems: Suitable for engine control units and infotainment systems where data integrity and reliability are crucial.
3. Consumer Electronics: Employed in devices requiring quick data retrieval and low power consumption.
4. Medical Devices: Provides reliable data storage for critical health monitoring equipment.
5. IoT Devices: Ideal for edge devices needing persistent memory with low latency.
6. Energy Management: Used in smart meters and other energy-efficient systems for real-time data storage.
These applications leverage MRAM’s speed, endurance, and non-volatility.
Package
The MR25H256CDF is a 256Kb non-volatile magnetoresistive random-access memory (MRAM) device. It is typically available in a small outline integrated circuit (SOIC) package, which is common for such components, providing a compact and reliable form factor suitable for various electronic applications.
