規格
| 屬性 | 價值 |
| Package / Case | Tray |
| Series | Automotive, AEC-Q100 |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | RAM |
| Technology | MRAM (Magnetoresistive RAM) |
| Memory Size | 4Mb (512K x 8) |
| Memory Interface | SPI |
| Clock Frequency | 40 MHz |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
概述
Description
The MR25H40MDF is a non-volatile magnetoresistive random-access memory (MRAM) device. It typically has a 4-megabit (512K x 8) density and provides high-speed performance with low power consumption. Unlike traditional volatile memory types like SRAM or DRAM, MRAM retains data even after power is removed, similar to Flash memory. This feature makes it suitable for applications requiring persistent storage without frequent data refresh cycles.
The MR25H40MDF operates over a wide temperature range, which makes it ideal for industrial applications. It supports standard serial peripheral interface (SPI) protocols, ensuring compatibility with various microcontrollers and systems. Its endurance, often rated at unlimited read/write cycles, and data retention capabilities, usually over 20 years, make it a reliable choice for demanding environments.
Key features of the MR25H40MDF include fast write and read speeds, robustness in harsh conditions, and immunity to data corruption from magnetic fields. These characteristics make it suitable for use in automotive, aerospace, industrial controls, and other applications where data integrity and reliability are crucial.
The MR25H40MDF operates over a wide temperature range, which makes it ideal for industrial applications. It supports standard serial peripheral interface (SPI) protocols, ensuring compatibility with various microcontrollers and systems. Its endurance, often rated at unlimited read/write cycles, and data retention capabilities, usually over 20 years, make it a reliable choice for demanding environments.
Key features of the MR25H40MDF include fast write and read speeds, robustness in harsh conditions, and immunity to data corruption from magnetic fields. These characteristics make it suitable for use in automotive, aerospace, industrial controls, and other applications where data integrity and reliability are crucial.
Equivalent
The MR25H40MDF is a magnetoresistive random-access memory (MRAM) chip. Equivalent products could include MRAM chips with similar specifications, such as the Everspin Technologies MR4A08BCMA35, or the Avalanche Technology P-SRAM series. These are non-volatile memory solutions with similar densities and interfaces. For more precise matching, ensure the specifications like memory size, interface, and packaging align with the MR25H40MDF requirements.
Features
The MR25H40MDF is a magnetoresistive random-access memory (MRAM) device, offering non-volatile memory storage. Key features include:
1. Capacity: 4 Mbit (512 K x 8-bit configuration).
2. Non-Volatile Memory: Retains data without power, combining the speed of RAM with the persistence of flash memory.
3. High Speed: Fast read and write capabilities, supporting rapid data access and storage.
4. Unlimited Endurance: Can endure virtually infinite read/write cycles, unlike traditional flash memory.
5. Low Power Consumption: Energy-efficient operation, making it suitable for battery-powered devices.
6. Wide Temperature Range: Operates effectively within a broad temperature spectrum, enhancing reliability in various environments.
7. Serial Peripheral Interface (SPI): Compatible with standard SPI protocols for easy integration into existing systems.
8. Data Integrity: Features inherent data reliability and robustness against magnetic fields.
9. Small Form Factor: Available in compact packaging, suitable for space-constrained applications.
These attributes make the MR25H40MDF an ideal choice for applications requiring durable and fast non-volatile memory.
1. Capacity: 4 Mbit (512 K x 8-bit configuration).
2. Non-Volatile Memory: Retains data without power, combining the speed of RAM with the persistence of flash memory.
3. High Speed: Fast read and write capabilities, supporting rapid data access and storage.
4. Unlimited Endurance: Can endure virtually infinite read/write cycles, unlike traditional flash memory.
5. Low Power Consumption: Energy-efficient operation, making it suitable for battery-powered devices.
6. Wide Temperature Range: Operates effectively within a broad temperature spectrum, enhancing reliability in various environments.
7. Serial Peripheral Interface (SPI): Compatible with standard SPI protocols for easy integration into existing systems.
8. Data Integrity: Features inherent data reliability and robustness against magnetic fields.
9. Small Form Factor: Available in compact packaging, suitable for space-constrained applications.
These attributes make the MR25H40MDF an ideal choice for applications requiring durable and fast non-volatile memory.
Pinout
The MR25H40MDF is a magnetoresistive random-access memory (MRAM) chip produced by Everspin Technologies. It is a non-volatile memory device with a capacity of 4 Mbit (512 K x 8). The MR25H40MDF is housed in an 8-pin DFN (Dual Flat No-leads) package.
Here is a brief description of the pin functions:
1. CS (Chip Select): Activates the device when set low.
2. SO (Serial Output): Outputs data from the memory during read operations.
3. WP (Write Protect): Used to disable all writing options to prevent data corruption.
4. VSS (Ground): Reference point for all voltages in the device.
5. SI (Serial Input): Inputs commands, addresses, and data to the device.
6. SCK (Serial Clock): Provides synchronization for the serial data input and output.
7. HOLD: Temporarily holds the communication, allowing other tasks to be executed.
8. VCC (Power Supply): Provides the power needed for the device operation.
These pins allow the MR25H40MDF to perform serial data transfer via the SPI protocol, making it suitable for applications requiring high-speed, non-volatile memory.
Here is a brief description of the pin functions:
1. CS (Chip Select): Activates the device when set low.
2. SO (Serial Output): Outputs data from the memory during read operations.
3. WP (Write Protect): Used to disable all writing options to prevent data corruption.
4. VSS (Ground): Reference point for all voltages in the device.
5. SI (Serial Input): Inputs commands, addresses, and data to the device.
6. SCK (Serial Clock): Provides synchronization for the serial data input and output.
7. HOLD: Temporarily holds the communication, allowing other tasks to be executed.
8. VCC (Power Supply): Provides the power needed for the device operation.
These pins allow the MR25H40MDF to perform serial data transfer via the SPI protocol, making it suitable for applications requiring high-speed, non-volatile memory.
Manufacturer
The MR25H40MDF is manufactured by Everspin Technologies, Inc. Everspin is a company that specializes in the development and production of magnetoresistive random-access memory (MRAM) solutions. MRAM is a type of non-volatile memory that retains data without power and is known for its high speed and endurance compared to other types of non-volatile memory. Everspin's products are used in various applications across multiple industries, including automotive, industrial, and data storage, where reliability and performance are critical.
Application
The MR25H40MDF is a non-volatile magnetoresistive random-access memory (MRAM) device. Its application areas include:
1. Automotive Electronics: Used for high-speed data storage in systems like infotainment, navigation, and advanced driver-assistance systems (ADAS).
2. Industrial Automation: Suitable for data logging and configuration storage in programmable logic controllers (PLCs) and other automation equipment.
3. Consumer Electronics: Employed in devices requiring fast and reliable data storage, such as digital cameras and gaming consoles.
4. Telecommunications: Used in network infrastructure for rapid data access and storage.
5. Medical Devices: Provides reliable data retention for critical medical equipment.
6. Aerospace and Defense: Utilized in avionics and mission-critical systems due to its robustness and reliability.
1. Automotive Electronics: Used for high-speed data storage in systems like infotainment, navigation, and advanced driver-assistance systems (ADAS).
2. Industrial Automation: Suitable for data logging and configuration storage in programmable logic controllers (PLCs) and other automation equipment.
3. Consumer Electronics: Employed in devices requiring fast and reliable data storage, such as digital cameras and gaming consoles.
4. Telecommunications: Used in network infrastructure for rapid data access and storage.
5. Medical Devices: Provides reliable data retention for critical medical equipment.
6. Aerospace and Defense: Utilized in avionics and mission-critical systems due to its robustness and reliability.
Package
The MR25H40MDF is a magnetoresistive random-access memory (MRAM) device, typically available in a small-outline package (SOP), like the 8-pin DFN (Dual Flat No-leads). This type of packaging facilitates compact integration on printed circuit boards, ideal for applications requiring non-volatile memory solutions with high-speed performance.