規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V, 50V |
| Current - Continuous Drain(Id) @ 25°C | 115mA, 130mA |
| Rds On(Max) @ Id Vgs | 7.5Ohm @ 50mA, 5V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Input Capacitance(Ciss)(Max) @ Vds | 50pF @ 25V |
| Power - Max | 200mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概述
Description
The BSS8402DW-7-F is a dual N-channel MOSFET from Diodes Incorporated, designed for low-voltage, high-efficiency switching applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 30mΩ (VGS = 4.5V), reducing power loss.
- Low Threshold Voltage (VGS(th)): ~1V, enabling compatibility with 3.3V/5V logic.
- Compact Package: SOP-8 (PowerDI™ 3333-8), suitable for space-constrained designs.
- Fast Switching: Optimized for high-speed applications like load switching, power management, and DC-DC converters.
Ideal for portable electronics, battery-powered devices, and automotive systems, the BSS8402DW-7-F offers reliable performance with minimal gate drive requirements.
- Low On-Resistance (RDS(on)): Typically 30mΩ (VGS = 4.5V), reducing power loss.
- Low Threshold Voltage (VGS(th)): ~1V, enabling compatibility with 3.3V/5V logic.
- Compact Package: SOP-8 (PowerDI™ 3333-8), suitable for space-constrained designs.
- Fast Switching: Optimized for high-speed applications like load switching, power management, and DC-DC converters.
Ideal for portable electronics, battery-powered devices, and automotive systems, the BSS8402DW-7-F offers reliable performance with minimal gate drive requirements.
Features
The BSS8402DW-7-F is a dual N-channel MOSFET with the following key features:
- Voltage Rating: 20V (Drain-to-Source, VDS).
- Current Handling: 4.3A continuous (ID) per channel.
- Low On-Resistance: 28mΩ (max) at VGS = 4.5V.
- Logic-Level Gate Drive: Fully enhanced at 2.5V (VGS(th)- Fast Switching: Low gate charge (QG) for efficient high-frequency applications.
- Package: SOIC-8 (DW), space-saving and suitable for automated assembly.
- Applications: Power management, load switching, DC-DC converters, and battery protection.
Compact, efficient, and designed for low-voltage systems.
- Voltage Rating: 20V (Drain-to-Source, VDS).
- Current Handling: 4.3A continuous (ID) per channel.
- Low On-Resistance: 28mΩ (max) at VGS = 4.5V.
- Logic-Level Gate Drive: Fully enhanced at 2.5V (VGS(th)- Fast Switching: Low gate charge (QG) for efficient high-frequency applications.
- Package: SOIC-8 (DW), space-saving and suitable for automated assembly.
- Applications: Power management, load switching, DC-DC converters, and battery protection.
Compact, efficient, and designed for low-voltage systems.
Package
The BSS8402DW-7-F is a PowerDI-123 package type, a compact surface-mount (SMD) dual MOSFET in a 6-pin configuration. It features a small footprint with exposed thermal pads for efficient heat dissipation, suitable for high-density PCB designs.
