圖片僅供參考
DMN1006UCA6-7
+物料清單MOSFET 2 N-CHANNEL X3-DSN2718-6
-
製造商二極體公司
-
製造商部分 #DMN1006UCA6-7
-
有存貨8631
365 天品質保證
7*24 小時服務保證
90-日售後保障
正品保證
規格
| 屬性 | 價值 |
| Supplier | Diodes Incorporated |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Standard |
| Vgs(th)(Max)@Id | 1.3V @ 1mA |
| GateCharge(Qg)(Max)@Vgs | 35.2nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 2360pF @ 6V |
| Power-Max | 2.4W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-SMD, No Lead |
概述
Description
Features
- Dual N‑channel MOSFET pair in a compact SMD package
- Logic-level gate drive (low Vgs(th))
- Low on-resistance (Rds(on)) for high efficiency
- Small footprint and lightweight for surface-mount designs
- Fast switching with relatively low input capacitance
- Intrinsic body diodes (and common-source/ drain configurations)
- Suitable for high-speed switching and efficient power management
- Protection variants may include ESD/short‑circuit handling (depends on exact part)
For precise values (Vds, Id, Rds(on), package type, switching specs), please provide the datasheet.
Pinout
- Function: N-channel enhancement-mode power MOSFET used as a switching transistor (for power-management, e.g., DC-DC converters, load switching). Gates control conduction between Drain and Source; multiple pins typically serve Drain and Source for low on-resistance.
Manufacturer
- What kind of company: A global semiconductor company that designs, manufactures, and markets discrete and protection devices (including MOSFETs, diodes, and related components) for electronics applications.
Application
- Power switching in DC-DC converters and voltage regulators
- Load switches and power-management circuits
- Motor control and drive stages (DC brushless/stepper)
- Battery charging/discharging protection and management
- Automotive electronics (power distribution, body electronics)
- General high-speed switching in portable and industrial power electronics
Its low on-resistance and fast switching enable efficient, compact switch-mode designs.