規格
| 屬性 | 價值 |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain(Id) @ 25°C | 200mA |
| Rds On(Max) @ Id Vgs | 3.5Ohm @ 220mA, 10V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Input Capacitance(Ciss)(Max) @ Vds | 50pF @ 10V |
| Power - Max | 200mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
概述
Description
The BSS138DW-7-F is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Diodes Incorporated. It is designed for use in low-voltage applications where space is a constraint, offering efficient power management. The BSS138DW-7-F operates with a maximum drain-source voltage (V_DS) of 50V and a continuous drain current (I_D) of 200mA. It is housed in a compact SOT-363 package, making it suitable for surface-mount applications.
This MOSFET features low on-resistance, which minimizes power dissipation and enhances efficiency, making it ideal for applications such as load switches, level shifters, and battery-powered devices. The BSS138DW-7-F is often used in circuits that require fast switching speeds and high input impedance. It also has a low threshold voltage, facilitating operation with low-voltage signals.
Overall, the BSS138DW-7-F is a versatile and efficient choice for designers looking to optimize space and power efficiency in compact electronic designs.
This MOSFET features low on-resistance, which minimizes power dissipation and enhances efficiency, making it ideal for applications such as load switches, level shifters, and battery-powered devices. The BSS138DW-7-F is often used in circuits that require fast switching speeds and high input impedance. It also has a low threshold voltage, facilitating operation with low-voltage signals.
Overall, the BSS138DW-7-F is a versatile and efficient choice for designers looking to optimize space and power efficiency in compact electronic designs.
Equivalent
The BSS138DW-7-F is a dual N-channel MOSFET. Equivalent products include:
1. BSS138 - Single version with similar specifications.
2. NDS7002A - Another N-channel MOSFET with similar parameters.
3. 2N7002DW - Dual N-channel MOSFET with comparable characteristics.
4. Si2302DS - An alternative with close electrical specifications.
These alternatives should match in terms of voltage, current rating, and packaging for compatibility. Always verify with datasheets to ensure compatibility in your application.
1. BSS138 - Single version with similar specifications.
2. NDS7002A - Another N-channel MOSFET with similar parameters.
3. 2N7002DW - Dual N-channel MOSFET with comparable characteristics.
4. Si2302DS - An alternative with close electrical specifications.
These alternatives should match in terms of voltage, current rating, and packaging for compatibility. Always verify with datasheets to ensure compatibility in your application.
Features
The BSS138DW-7-F is a surface-mount N-channel MOSFET known for its compact design and efficient performance. Key features include:
1. Low On-Resistance: It offers low on-state resistance, which enhances efficiency by reducing power loss during operation.
2. Low Gate-Source Voltage: The MOSFET operates efficiently with a low threshold voltage, making it suitable for low-voltage applications.
3. High Speed: It supports fast switching speeds, which is advantageous for high-frequency applications.
4. Compact Package: Encased in a small SOT-363 package, it is ideal for space-constrained designs.
5. Optimized for Switching Applications: It is designed for use in load switching, level shifting, and other switching applications.
6. RoHS Compliant: The device is environmentally friendly, adhering to the Restriction of Hazardous Substances directive.
7. Wide Operating Temperature Range: Suitable for various environments, it operates between -55°C and +150°C.
These features make the BSS138DW-7-F a versatile choice for applications that require efficient switching and space efficiency.
1. Low On-Resistance: It offers low on-state resistance, which enhances efficiency by reducing power loss during operation.
2. Low Gate-Source Voltage: The MOSFET operates efficiently with a low threshold voltage, making it suitable for low-voltage applications.
3. High Speed: It supports fast switching speeds, which is advantageous for high-frequency applications.
4. Compact Package: Encased in a small SOT-363 package, it is ideal for space-constrained designs.
5. Optimized for Switching Applications: It is designed for use in load switching, level shifting, and other switching applications.
6. RoHS Compliant: The device is environmentally friendly, adhering to the Restriction of Hazardous Substances directive.
7. Wide Operating Temperature Range: Suitable for various environments, it operates between -55°C and +150°C.
These features make the BSS138DW-7-F a versatile choice for applications that require efficient switching and space efficiency.
Pinout
The BSS138DW-7-F is a dual N-channel MOSFET with a total of 8 pins. Each channel of the MOSFET has the following pin configuration:
1. Drain (D): Connects to the load.
2. Gate (G): Controls the MOSFET's conduction state; applying a voltage here turns the MOSFET on or off.
3. Source (S): Connected to ground or the negative side of the power supply.
The device is housed in an 8-pin surface-mount package. It features low on-resistance and is commonly used for level shifting, load switching, or as part of a DC-DC converter in various electronic applications.
1. Drain (D): Connects to the load.
2. Gate (G): Controls the MOSFET's conduction state; applying a voltage here turns the MOSFET on or off.
3. Source (S): Connected to ground or the negative side of the power supply.
The device is housed in an 8-pin surface-mount package. It features low on-resistance and is commonly used for level shifting, load switching, or as part of a DC-DC converter in various electronic applications.
Manufacturer
The BSS138DW-7-F is manufactured by Diodes Incorporated. Diodes Incorporated is a company that specializes in the design, manufacturing, and supply of application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. They serve a wide range of applications in the consumer electronics, computing, communications, industrial, and automotive markets. The company is known for its extensive portfolio of semiconductor devices, which includes diodes, rectifiers, transistors, MOSFETs, protection devices, amplifiers, comparators, Hall-effect and temperature sensors, and a variety of power management devices.
Application
The BSS138DW-7-F is a dual N-channel MOSFET commonly used in various electronic applications. Its primary application areas include:
1. Switching: Utilized in switching applications for low-voltage DC circuits due to its fast switching speed and low on-resistance.
2. Load Management: Suitable for load switching in battery-operated devices.
3. Level Shifting: Employed in level shifting circuits, especially for interfacing between different voltage domains.
4. Amplification: Used in signal amplification circuits due to its low threshold voltage.
5. Power Management: Integrates into power management systems in portable and handheld devices.
These characteristics make it ideal for consumer electronics, telecommunications, and automotive applications.
1. Switching: Utilized in switching applications for low-voltage DC circuits due to its fast switching speed and low on-resistance.
2. Load Management: Suitable for load switching in battery-operated devices.
3. Level Shifting: Employed in level shifting circuits, especially for interfacing between different voltage domains.
4. Amplification: Used in signal amplification circuits due to its low threshold voltage.
5. Power Management: Integrates into power management systems in portable and handheld devices.
These characteristics make it ideal for consumer electronics, telecommunications, and automotive applications.
Package
The BSS138DW-7-F is packaged in a SOT-363, which is a small-outline transistor package with six leads.
