Part A
MMBT5401
安森美
- Lifecycle
- Active
- Stock
- 6921 件
- Package
- SOT-23-3
- Series
- 電晶體-雙極型電晶體（BJT）-單
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | MMBT5401 | MMBT5551 |
|---|---|---|
| Part Status | Obsolete | Active |
| Transistor Type | PNP | NPN |
| Current - Collector(Ic)(Max) | 600 mA | - |
| Voltage - Collector Emitter Breakdown(Max) | 150 V | - |
| Vce Saturation(Max) @ Ib Ic | 500mV @ 5mA, 50mA | - |
| Current - Collector Cutoff(Max) | 50nA (ICBO) | - |
| DC Current Gain(h FE)(Min) @ Ic Vce | 60 @ 10mA, 5V | - |
| Power - Max | 350 mW | 350 mW |
| Frequency - Transition | 300MHz | 300MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Current - Collector (Ic) (Max) | - | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | - | 160 V |
| Vce Saturation (Max) @ Ib, Ic | - | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | - | 50µA |
| DC Current Gain (h FE) (Min) @ Ic, Vce | - | 80 @ 10mA, 5V |
| Packaging | - | Tape & Reel (TR) |