MMBT5401 vs MMBT5550LT1G

對 MMBT5401 和 MMBT5550LT1G 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

MMBT5401

安森美

Lifecycle
Active
Stock
6921 件
Package
SOT-23-3
Series
電晶體-雙極型電晶體（BJT）-單
+物料清單 詢價

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

詢價 Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MMBT5401 MMBT5550LT1G
Part Status Obsolete Active
Transistor Type PNP NPN
Current - Collector(Ic)(Max) 600 mA 600 mA
Voltage - Collector Emitter Breakdown(Max) 150 V 140 V
Vce Saturation(Max) @ Ib Ic 500mV @ 5mA, 50mA 250mV @ 5mA, 50mA
Current - Collector Cutoff(Max) 50nA (ICBO) 100nA
DC Current Gain(h FE)(Min) @ Ic Vce 60 @ 10mA, 5V 60 @ 10mA, 5V
Power - Max 350 mW 225 mW
Frequency - Transition 300MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Compare 詢價