MMBT5401 vs MMBT5551M3T5G

對 MMBT5401 和 MMBT5551M3T5G 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

MMBT5401

安森美

Lifecycle
Active
Stock
6921 件
Package
SOT-23-3
Series
電晶體-雙極型電晶體（BJT）-單
+物料清單 詢價

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification MMBT5401 MMBT5551M3T5G
Supplier - onsemi
Part Status Obsolete Active
Transistor Type PNP NPN
Current - Collector(Ic)(Max) 600 mA 60 mA
Voltage - Collector Emitter Breakdown(Max) 150 V 160 V
Vce Saturation(Max) @ Ib Ic 500mV @ 5mA, 50mA 200mV @ 5mA, 50mA
Current - Collector Cutoff(Max) 50nA (ICBO) 50nA
DC Current Gain(h FE)(Min) @ Ic Vce 60 @ 10mA, 5V 80 @ 10mA, 5V
Power - Max 350 mW 265 mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Frequency - Transition 300MHz -
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