IRF9389TRPBF vs IRF9310TRPBF
對 IRF9310TRPBF 和 IRF9389TRPBF 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。如需更多信息，請參閱其數據手冊或聯繫我們的銷售團隊，我們將協助您選擇適合您設計的元件。
包裹
SO-8
描述
MOSFET P-CH 30V 20A 8SO
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO
Series
HEXFET®
HEXFET®
Part Status
Obsolete
-
Base Product Number
IRF9310
-
FET Type
P-Channel
-
Technology
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss)
30 V
-
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
-
Rds On (Max) @ Id, Vgs
4.6mOhm @ 20A, 10V
-
Vgs(th) (Max) @ Id
2.4V @ 100µA
-
Gate Charge (Qg) (Max) @ Vgs
165 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
5250 pF @ 15 V
-
Power Dissipation (Max)
2.5W (Ta)
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Mounting Type
Surface Mount
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
ProductStatus
-
Active
FETType
-
N and P-Channel
FETFeature
-
Logic Level Gate
DraintoSourceVoltage(Vdss)
-
30V
Current-ContinuousDrain(Id)@25°C
-
6.8A, 4.6A
RdsOn(Max)@IdVgs
-
27mOhm @ 6.8A, 10V
Vgs(th)(Max)@Id
-
2.3V @ 10µA
GateCharge(Qg)(Max)@Vgs
-
14nC @ 10V
InputCapacitance(Ciss)(Max)@Vds
-
398pF @ 15V
Power-Max
-
2W
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Surface Mount
