BSS84LT1G vs BSS84V-7-79

對 BSS84LT1G 和 BSS84V-7-79 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification BSS84LT1G BSS84V-7-79
Supplier - Diodes Incorporated
Part Status Active Obsolete
FET Type P-Channel 2 P-Channel (Dual)
FET Feature - Standard
Drain to Source Voltage (Vdss) 50 V 50V
Current - Continuous Drain(Id) @ 25°C 130mA (Ta) 130mA (Ta)
Rds On(Max) @ Id Vgs 10Ohm @ 100mA, 5V 10Ohm @ 100mA, 5V
Vgs(th)(Max) @ Id 2V @ 250µA 2V @ 1mA
Input Capacitance(Ciss)(Max) @ Vds 30 pF @ 5 V 45pF @ 25V
Power - Max - 150mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Technology MOSFET (Metal Oxide) -
Drive Voltage(Max Rds On Min Rds On) 5V -
Vgs(Max) ±20V -
Power Dissipation (Max) 225mW (Ta) -
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