BSS84LT1G vs BSS84

對 BSS84LT1G 和 BSS84 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part B

BSS84

安邦電晶體（國際）有限公司

Lifecycle
Active
Stock
3000 件
Package
SOT-23
Series
電晶體-FET、MOSFET-單
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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification BSS84LT1G BSS84
Part Status Active Active
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 50 V -
Current - Continuous Drain(Id) @ 25°C 130mA (Ta) -
Drive Voltage(Max Rds On Min Rds On) 5V -
Rds On(Max) @ Id Vgs 10Ohm @ 100mA, 5V -
Vgs(th)(Max) @ Id 2V @ 250µA -
Vgs(Max) ±20V -
Input Capacitance(Ciss)(Max) @ Vds 30 pF @ 5 V -
Power Dissipation (Max) 225mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
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