BSS84LT1G vs BSS84AKW,115

對 BSS84LT1G 和 BSS84AKW,115 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

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Full specification comparison

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Specification BSS84LT1G BSS84AKW,115
Supplier - Nexperia USA Inc.
Series - Automotive, AEC-Q101, TrenchMOS™
Part Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain(Id) @ 25°C 130mA (Ta) 150mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 5V 10V
Rds On(Max) @ Id Vgs 10Ohm @ 100mA, 5V 7.5Ohm @ 100mA, 10V
Vgs(th)(Max) @ Id 2V @ 250µA 2.1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 0.35 nC @ 5 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 30 pF @ 5 V 36 pF @ 25 V
Power Dissipation (Max) 225mW (Ta) 260mW (Ta), 830mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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