Part A
BC857BLT1G
安森美
- Lifecycle
- Active
- Stock
- 7181 件
- Package
- SOT-23-3
- Series
- 電晶體-雙極型電晶體（BJT）-單
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | BC857BLT1G | BC857C |
|---|---|---|
| Part Status | Active | Active |
| Transistor Type | PNP | PNP |
| Current - Collector(Ic)(Max) | 100 mA | 100 mA |
| Voltage - Collector Emitter Breakdown(Max) | 45 V | 45 V |
| Vce Saturation(Max) @ Ib Ic | 650mV @ 5mA, 100mA | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff(Max) | 15nA (ICBO) | 100nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 220 @ 2mA, 5V | 420 @ 2mA, 5V |
| Power - Max | 300 mW | 200 mW |
| Frequency - Transition | 100MHz | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |