BC857BLT1G vs BC857BS

對 BC857BLT1G 和 BC857BS 的深入比較,為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素,包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異,簡化了元件選擇,讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

BC857BLT1G

安森美

Lifecycle
Active
Stock
7181 件
Package
SOT-23-3
Series
電晶體-雙極型電晶體(BJT)-單
Part B

BC857BS

揚州陽捷電子科技有限公司

Lifecycle
Active
Stock
1435 件
Package
SOT-363
Series
雙極電晶體(BJT)陣列

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification BC857BLT1G BC857BS
Part Status Active Active
Transistor Type PNP 2 PNP (Dual)
Current - Collector(Ic)(Max) 100 mA 100mA
Voltage - Collector Emitter Breakdown(Max) 45 V 45V
Vce Saturation(Max) @ Ib Ic 650mV @ 5mA, 100mA 300mV @ 500µA, 10mA
Current - Collector Cutoff(Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce 220 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 300 mW 300mW
Frequency - Transition 100MHz 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount