BC857C

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BC857C

+物料清單

TRANS PNP 45V 0.1A SOT23

  • 製造商揚州陽捷電子科技有限公司

  • 製造商部分 #BC857C

  • 包裹 SOT-23-3

  • 有存貨6157

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規格

屬性 價值
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 100 mA
Voltage-CollectorEmitterBreakdown(Max) 45 V
VceSaturation(Max)@IbIc 650mV @ 5mA, 100mA
Current-CollectorCutoff(Max) 100nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 420 @ 2mA, 5V
Power-Max 200 mW
Frequency-Transition 100MHz
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

概述

Description

The BC857C is a PNP bipolar junction transistor (BJT) commonly used in electronic circuits for amplification and switching purposes. It is part of the BC857 series, which includes variants with different current gain (hFE) characteristics, with the "C" version having the highest gain in the series. Specifically, the BC857C is designed for use in general-purpose switching and amplification applications.
Key specifications for the BC857C include:
- Package Type: SOT-23, a small surface-mount package ideal for space-constrained applications.
- Collector-Emitter Voltage (VCEO): -45V, indicating the maximum voltage it can handle between collector and emitter terminals.
- Collector Current (IC): -100mA, specifying the maximum current it can conduct.
- Current Gain (hFE): Typically ranges from 420 to 800, which is higher compared to other variants like BC857A and BC857B.
- Power Dissipation: 250mW, the maximum amount of power it can dissipate without damage.
Due to its compact size and efficiency, the BC857C is widely used in small-signal processing, amplification, and switching in various consumer electronics and communication devices.

Equivalent

The BC857C is a PNP bipolar junction transistor. Equivalent products include:
1. BC558C
2. BC327
3. BC560C
4. 2N3906 (with considerations for different characteristics)
5. 2SA1015
Ensure to check the datasheets for exact specifications and pin configurations, as there might be variations in parameters like current rating and gain.

Features

The BC857C is a PNP bipolar junction transistor (BJT) commonly used for general-purpose amplification and switching applications. Here are its key features:
1. Polarity: PNP
2. Package: SOT-23, a small surface-mount package suitable for compact electronic designs.
3. Collector-Emitter Voltage (Vceo): -45V, indicating the maximum voltage the transistor can withstand between the collector and emitter.
4. Collector Current (Ic): -100 mA, the maximum continuous current that can flow through the collector.
5. Power Dissipation (Ptot): 250 mW, the maximum power the device can dissipate.
6. DC Current Gain (hFE): Typically ranges from 420 to 800, specifying the current amplification factor.
7. Transition Frequency (fT): Approximately 100 MHz, indicating the frequency at which the gain drops to unity.
8. Thermal Resistance: The junction-to-ambient thermal resistance is about 500°C/W.
These features make the BC857C suitable for use in signal processing, switching circuits, and as a general-purpose amplifier in electronic devices.

Pinout

The BC857C is a general-purpose PNP bipolar junction transistor (BJT) commonly used in electronic circuits. It is housed in a small SOT-23 surface-mount package. The transistor has three pins with the following functions:
1. Pin 1 (Base): This pin is the control terminal of the transistor. A small current entering the base is used to control the larger current flowing between the collector and emitter.
2. Pin 2 (Emitter): The emitter is the terminal through which the majority carriers leave the transistor. In a PNP transistor like the BC857C, the emitter is typically connected to a more negative voltage compared to the collector.
3. Pin 3 (Collector): The collector is the terminal through which the majority carriers enter the transistor. It is connected to the load in the circuit.
The BC857C is mainly used for amplification and switching applications, with a high current gain and low noise characteristics.

Manufacturer

The BC857C is a general-purpose PNP bipolar junction transistor. It is manufactured by several companies, including Nexperia, ON Semiconductor, and Infineon Technologies, among others.
- Nexperia: A leading manufacturer specializing in Discretes, Logic, and MOSFET devices. It was founded as a separate entity from NXP Semiconductors in 2017 and focuses on automotive, mobile, computing, and industrial markets.
- ON Semiconductor (now onsemi): A company that supplies semiconductor-based solutions, with a focus on energy-efficient products. It serves the automotive, industrial, cloud power, and IoT sectors.
- Infineon Technologies: A German semiconductor manufacturer known for its electronic components used in automotive, industrial power control, and digital security solutions.
These companies are well-established in the semiconductor industry and provide a wide range of electronic components for various applications, emphasizing innovation, reliability, and efficiency in their products. The BC857C transistor is commonly used in amplifiers, switches, and signal processing tasks.

Application

The BC857C is a PNP bipolar junction transistor commonly used in various low-power general-purpose applications. It is suitable for amplification and switching tasks in audio amplification circuits, signal processing, and small signal amplification. Its features make it ideal for use in consumer electronics, such as radios, televisions, and amplifiers. Additionally, it is employed in oscillator circuits, driver stages in high-frequency applications, and DC-DC converters. The BC857C is also useful in sensor circuits and as a switch for relays and other components in automation systems. Its compact size and reliability make it a popular choice for surface-mount technology (SMT) applications.

Package

The BC857C is a PNP bipolar junction transistor typically found in a SOT-23 surface-mount package. This package type is compact, making it suitable for applications requiring space-efficient, high-density circuit designs.