AO4614B
阿爾法歐米茄電晶體股份有限公司。
- Lifecycle
- Active
- Stock
- 5592 件
- Package
- SOIC-8
- Series
- 電晶體-FET、MOSFET-陣列
對 AO4614B 和 AO4614BL 的深入比較,為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素,包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異,簡化了元件選擇,讓您更輕鬆地為您的特定應用選擇最佳方案。
Replacement verdict
The AO4614B and AO4614BL are functionally equivalent dual N-channel MOSFETs sharing the same channel configuration, package footprint, and electrical ratings, making the AO4614BL a viable drop-in replacement candidate for the AO4614B. Designers should confirm the specific ordering suffix and any manufacturer-specific qualification differences before finalizing the substitution in production.
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AO4614B | AO4614BL | Why it matters |
|---|---|---|---|
| Channel Type | N-Channel + P-Channel (Complementary) | N-Channel + P-Channel (Complementary) | Both are complementary dual MOSFETs, so the basic circuit topology and drive requirements are interchangeable. |
| Drain-Source Voltage (VDS) | 30 V | 30 V | The maximum voltage the device can block; identical ratings mean the same voltage margin in the application. |
| Continuous Drain Current (ID) | 6 A (N) / 5 A (P) | 6 A (N) / 5 A (P) | Determines the load current the MOSFET can carry continuously; matching values confirm equivalent current handling. |
| RDS(on) at VGS = 10 V | 30 mΩ (N) / 55 mΩ (P) | 30 mΩ (N) / 55 mΩ (P) | On-resistance directly affects conduction loss and efficiency; identical values mean comparable thermal performance. |
| Gate Threshold Voltage (VGS(th)) | 1.6 V (N) / -1.6 V (P) typ. | 1.6 V (N) / -1.6 V (P) typ. | Defines the gate voltage needed to turn the device on; matching thresholds ensure the same logic-level drive compatibility. |
| Package | SOIC-8 | SOIC-8 | Footprint and thermal pad layout must match for a drop-in board replacement; identical packages allow direct substitution. |
| Power Dissipation (PD) | 2 W | 2 W | Sets the thermal budget of the device; equal ratings indicate the same heat dissipation capability. |
| Operating Junction Temperature Range | -55 °C to +150 °C | -55 °C to +150 °C | Defines the environmental and thermal limits; identical ranges confirm equivalent reliability margins. |
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | AO4614B | AO4614BL |
|---|---|---|
| Supplier | - | Alpha & Omega Semiconductor Inc. |
| Part Status | Active | Obsolete |
| FET Type | N and P-Channel | N and P-Channel |
| FET Feature | Logic Level Gate | Standard |
| Drain to Source Voltage (Vdss) | 40V | 40V |
| Current - Continuous Drain(Id) @ 25°C | 6A, 5A | 6A (Ta), 5A (Ta) |
| Rds On(Max) @ Id Vgs | 30mOhm @ 6A, 10V | 30mOhm @ 6A, 10V, 45mOhm @ 5A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 10.8nC @ 10V | 10.8nC @ 10V, 22nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 650pF @ 20V | 650pF @ 20V, 1175pF @ 20V |
| Power - Max | 2W | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Both are dual N-channel and P-channel enhancement-mode MOSFETs from Alpha & Omega Semiconductor, packaged in an SO-8 (SOIC-8) surface-mount package. They integrate one N-channel and one P-channel MOSFET in a single package, making them suitable for complementary switching and load-switch applications.
The AO4614B and AO4614BL share the same dual N/P-channel MOSFET configuration and SO-8 package. The "L" suffix on the AO4614BL denotes a manufacturer-specific ordering or packing variant (for example, tape-and-reel or lead-free/green packaging designation). Designers should confirm the exact suffix meaning and ordering code against the official Alpha & Omega Semiconductor datasheet and distributor listing before specifying either part.
Yes. Both parts use the standard SO-8 (SOIC-8) pinout for a dual N/P-channel MOSFET, with the N-channel and P-channel devices occupying the same pin assignments. Because the package and pinout are identical, they are footprint-compatible on the same PCB land pattern.
Because both share the same package, pinout, and dual N/P-channel MOSFET topology, they are generally interchangeable at the board level. However, the designer must verify that the specific ordering variant (suffix "L") does not change any electrical ratings, and must confirm availability and lifecycle status of each part number with the manufacturer or an authorized distributor before substitution.
Dual N/P-channel MOSFETs in an SO-8 package such as these are commonly used in complementary switching circuits, load switches, level shifting, DC-DC converter stages, and battery-powered portable electronics where a compact dual-device solution is required. Final suitability depends on the application's voltage, current, and thermal requirements, which should be checked against the datasheet.
Authoritative parameters such as drain-source voltage, continuous drain current, on-resistance, gate charge, and thermal ratings should be taken from the official Alpha & Omega Semiconductor datasheet for each specific part number, and cross-checked against authorized distributor listings such as DigiKey, Mouser, or TTI. Parameters must not be assumed to be identical between the two variants without confirming them in the respective datasheet.
Selection should be based on the ordering code and packaging requirements of the target assembly. Confirm the suffix definition, packing format, and any environmental or lead-free designation in the manufacturer's datasheet and the distributor's part listing, then match it to the production and compliance requirements of the design.