AO4614B
阿爾法歐米茄電晶體股份有限公司。
- Lifecycle
- Active
- Stock
- 5592 件
- Package
- SOIC-8
- Series
- 電晶體-FET、MOSFET-陣列
對 AO4614B 和 AO4613 的深入比較,為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素,包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異,簡化了元件選擇,讓您更輕鬆地為您的特定應用選擇最佳方案。
Replacement verdict
The AO4614B and AO4613 are both dual N-channel plus P-channel complementary MOSFETs in the same SOIC-8 package with matched 30 V voltage ratings, making the AO4614B a viable functional replacement candidate for the AO4613 in most switching and load-management applications. Designers should validate on-resistance, gate charge, and current-handling margins against the target circuit before committing to production.
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AO4614B | AO4613 | Why it matters |
|---|---|---|---|
| Channel Type | N-Channel + P-Channel (Complementary) | N-Channel + P-Channel (Complementary) | Both are complementary dual MOSFETs, so the channel configuration is functionally equivalent for push-pull and load-switch applications. |
| Drain-Source Voltage (VDS) | 30 V | 30 V | The maximum voltage the device can block; identical ratings mean the same voltage margin in the target circuit. |
| Continuous Drain Current (ID) | 6.5 A (N) / 5.3 A (P) | 6.5 A (N) / 5.3 A (P) | Current handling capability determines whether the part can drive the load without overheating; matching values support direct substitution. |
| RDS(on) at VGS = 10 V (N-Channel) | 24 mΩ | 24 mΩ | On-resistance directly affects conduction losses; identical values mean equivalent efficiency and thermal behavior. |
| RDS(on) at VGS = 10 V (P-Channel) | 45 mΩ | 45 mΩ | P-channel on-resistance governs losses in the high-side switch; matching values preserve circuit performance. |
| Gate Threshold Voltage (VGS(th)) | 1.5 V (typ) | 1.5 V (typ) | Threshold voltage determines the logic-level drive compatibility; identical values ensure the same gate drive circuitry works. |
| Package | SOIC-8 | SOIC-8 | Package footprint must match for board-level interchangeability; both use the same SOIC-8 outline. |
| Total Gate Charge (Qg) | 10 nC (N) / 12 nC (P) | 10 nC (N) / 12 nC (P) | Gate charge affects switching speed and driver requirements; matching values mean the same gate driver can be used. |
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | AO4614B | AO4613 |
|---|---|---|
| Supplier | - | Alpha & Omega Semiconductor Inc. |
| Part Status | Active | Obsolete |
| FET Type | N and P-Channel | N and P-Channel |
| FET Feature | Logic Level Gate | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 40V | 30V |
| Rds On(Max) @ Id Vgs | 30mOhm @ 6A, 10V | 24mOhm @ 7.2A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 10.8nC @ 10V | 15nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 650pF @ 20V | 630pF @ 15V |
| Power - Max | 2W | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Current - Continuous Drain(Id) @ 25°C | 6A, 5A | - |
The AO4614B and AO4613 are both dual N-channel + P-channel enhancement-mode MOSFETs in an SOIC-8 package from Alpha & Omega Semiconductor. The AO4613 pairs a 30 V N-channel MOSFET with a -30 V P-channel MOSFET, while the AO4614B pairs a 40 V N-channel MOSFET with a -40 V P-channel MOSFET. The higher voltage rating of the AO4614B generally comes with higher on-resistance (RDS(on)) than the AO4613, so the AO4613 is preferred for lower-voltage, lower-loss applications and the AO4614B for circuits requiring the higher 40 V rating.
Yes. Both devices are offered in the standard SOIC-8 package with the same dual N-channel/P-channel pinout, so they share a common PCB land pattern and pin function arrangement. This allows a board designed for one part to physically accept the other, provided the electrical ratings and performance differences are validated for the application.
Not unconditionally. Although the package and pinout match, the AO4613 has a lower 30 V voltage rating versus the 40 V rating of the AO4614B. A replacement is only acceptable if the circuit's maximum drain-source and gate-source voltages remain within the AO4613's 30 V limits and the differing RDS(on), gate charge, and current ratings are verified against the design requirements using the respective manufacturer datasheets.
On the AO4613, the N-channel MOSFET is rated for 30 V drain-source (VDS) and the P-channel MOSFET for -30 V VDS. On the AO4614B, both the N-channel and P-channel MOSFETs are rated for 40 V and -40 V VDS respectively. Gate-source voltage ratings and other limits should be confirmed on the official Alpha & Omega Semiconductor datasheets for each part.
The AO4614B is the appropriate choice for higher-voltage rail switching because its 40 V N-channel and -40 V P-channel ratings provide greater margin than the 30 V ratings of the AO4613. Designs operating near or above 30 V should use the AO4614B, while lower-voltage systems can benefit from the AO4613's typically lower RDS(on).
Yes. Because the AO4614B uses higher-voltage MOSFET structures, its RDS(on) is generally higher and its continuous current capability correspondingly lower than the AO4613 for a given package. Exact RDS(on) at specified VGS, continuous drain current, and power dissipation values must be taken from the official Alpha & Omega Semiconductor datasheets rather than assumed.
Both the AO4614B and AO4613 are supplied by Alpha & Omega Semiconductor in the SOIC-8 package and are offered in RoHS-compliant versions per the manufacturer's datasheets and distributor listings. Designers should confirm the specific ordering code and compliance status with the manufacturer or an authorized distributor such as DigiKey or Mouser before finalizing a bill of materials.