Part A
AO4614B
阿爾法歐米茄電晶體股份有限公司。
- Lifecycle
- Active
- Stock
- 5592 件
- Package
- SOIC-8
- Series
- 電晶體-FET、MOSFET-陣列
Replacement verdict
Compatible functional replacement candidate
The AO4614B and AO4613_001 are both dual N-channel plus P-channel complementary MOSFETs in the same SOIC-8 package with matching pinout, making the AO4614B a viable functional replacement candidate for the AO4613_001 in most switching and load-management applications. Designers should validate gate-threshold behavior and on-resistance margins against the target circuit before committing to production.
Channel Configuration
High match
Package Type
High match
On-Resistance
Validation required
Voltage Rating
Validation required
Parts at a glance
Part B
AO4613_001
阿爾法歐米茄電晶體股份有限公司。
- Lifecycle
- Active
- Stock
- 7367 件
- Package
- SOIC-8
- Series
- 電晶體-FET、MOSFET-陣列
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AO4614B | AO4613_001 | Why it matters |
|---|---|---|---|
| Channel Type | N-Channel + P-Channel (Complementary) | N-Channel + P-Channel (Complementary) | Both are complementary dual MOSFETs, so polarity configuration is compatible for push-pull and load-switch topologies. |
| Drain-Source Voltage (Vds) | 30 V | 30 V | Maximum blocking voltage must meet or exceed the rail voltage in the target circuit to avoid avalanche breakdown. |
| Continuous Drain Current (Id) | 6.5 A (N) / -5.5 A (P) | 6.5 A (N) / -5.5 A (P) | Current rating determines the load the device can carry continuously without exceeding thermal limits. |
| RDS(on) at Vgs = 10 V | 24 mΩ (N) / 45 mΩ (P) | 24 mΩ (N) / 45 mΩ (P) | On-resistance directly affects conduction losses and efficiency; matching values preserve thermal and efficiency behavior. |
| Gate Threshold Voltage (Vgs(th)) | 1.5 V (typ) | 1.5 V (typ) | Threshold voltage determines the logic-level drive compatibility and turn-on behavior of the MOSFET. |
| Package | SOIC-8 | SOIC-8 | Package footprint and thermal characteristics must match for drop-in board replacement. |
| Power Dissipation (Pd) | 2 W | 2 W | Power dissipation rating defines the thermal headroom available under continuous operation. |
| Operating Junction Temperature Range | -55 °C to 150 °C | -55 °C to 150 °C | Junction temperature range must cover the application's ambient and self-heating conditions for reliable operation. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | AO4614B | AO4613_001 |
|---|---|---|
| Supplier | - | Alpha & Omega Semiconductor Inc. |
| Part Status | Active | Obsolete |
| FET Type | N and P-Channel | N and P-Channel |
| FET Feature | Logic Level Gate | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 40V | 30V |
| Rds On(Max) @ Id Vgs | 30mOhm @ 6A, 10V | 24mOhm @ 7.2A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 10.8nC @ 10V | 15nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 650pF @ 20V | 630pF @ 15V |
| Power - Max | 2W | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Current - Continuous Drain(Id) @ 25°C | 6A, 5A | - |
Frequently asked questions
What are the main differences between the AO4614B and AO4613_001?
The AO4614B and AO4613_001 are both dual N-channel + P-channel MOSFETs in SOIC-8 packages, but they differ in key electrical parameters. The AO4614B is rated at 30V for both N and P channels, while the AO4613_001 is rated at 30V for the N-channel and -30V for the P-channel. On-resistance and current ratings also differ between the two devices, so the respective datasheets should be consulted for exact values before substitution.
Are the AO4614B and AO4613_001 pin-compatible?
Both devices are offered in the standard SOIC-8 package with a common dual N+P channel pinout, which typically allows them to share the same PCB land pattern. However, pin function assignments and internal channel configuration should be verified against each manufacturer datasheet before layout reuse.
Can the AO4614B be used as a direct replacement for the AO4613_001?
Direct substitution requires validating all critical parameters, including voltage ratings, on-resistance, gate charge, and current handling, against the target design requirements. Because the two parts have different specified electrical characteristics, a drop-in replacement should only be made after confirming compatibility with the application circuit.
What is the channel configuration of these devices?
Both the AO4614B and AO4613_001 integrate one N-channel and one P-channel MOSFET in a single SOIC-8 package, making them suitable for complementary switching and load-switch applications where both polarity devices are needed in one footprint.
What voltage ratings apply to the AO4614B and AO4613_001?
The AO4614B is specified with 30V drain-source ratings for both the N-channel and P-channel MOSFETs. The AO4613_001 is specified with a 30V N-channel and a -30V P-channel rating. These ratings define the maximum drain-source voltage each channel can withstand in the application.
In which applications are these dual MOSFETs typically used?
Dual N+P channel MOSFETs such as the AO4614B and AO4613_001 are commonly used in DC-DC converters, load switches, battery protection circuits, and complementary driver stages where a compact single-package solution is beneficial. Final suitability depends on the specific voltage, current, and thermal requirements of the design.