2N7002ET1G vs 2N7002LT1G

對 2N7002ET1G 和 2N7002LT1G 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002ET1G is a compatible functional replacement candidate for the 2N7002LT1G in most low-voltage switching applications, with equivalent drain-source voltage, continuous drain current, and package footprint. Designers should validate gate threshold voltage tolerance and on-resistance characteristics against circuit requirements before finalizing the substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Gate Threshold Voltage Validation required
On-Resistance Validation required

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Parts at a glance

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002ET1G 2N7002LT1G
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 260mA (Ta) 115mA (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 5V, 10V
Rds On(Max) @ Id Vgs 2.5Ohm @ 240mA, 10V 7.5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.81 nC @ 5 V -
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 26.7 pF @ 25 V 50 pF @ 25 V
Power Dissipation (Max) 300mW (Tj) 225mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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