2N7002E vs 2N7002ET1G

對 2N7002E 和 2N7002ET1G 的深入比較，為您帶來關於其規格和關鍵特性的寶貴見解。我們詳細介紹了重要因素，包括 RoHS 合規性、REACH 狀態、系列、安裝方式、封裝類型以及其他相關特性。並排展示差異，簡化了元件選擇，讓您更輕鬆地為您的特定應用選擇最佳方案。

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002ET1G and 2N7002E are functionally compatible N-channel MOSFETs with matching voltage, current, and package characteristics, making the 2N7002ET1G a viable replacement candidate for the 2N7002E in most low-power switching applications. Designers should verify gate threshold and RDS(on) tolerances against their specific circuit requirements before finalizing the substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Static Drain-Source On-Resistance Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002E

松下電子元件

Lifecycle
Active
Stock
3552 件
Package
SOT-23-3
Series
電晶體-FET、MOSFET-單
+物料清單 詢價

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002E 2N7002ET1G
Part Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 260mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 3Ohm @ 100mA, 10V 2.5Ohm @ 240mA, 10V
Vgs(th)(Max) @ Id 3V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.8 nC @ 4.5 V 0.81 nC @ 5 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 40 pF @ 10 V 26.7 pF @ 25 V
Power Dissipation (Max) 350mW (Ta) 300mW (Tj)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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