Part A
2N7002ET1G
安森美
- Lifecycle
- Active
- Stock
- 4059 件
- Package
- SOT-23-3
- Series
- 電晶體-FET、MOSFET-單
Replacement verdict
Compatible functional replacement candidate
The 2N7002ET1G and 2N7002CK are both N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable voltage and current ratings, making the 2N7002CK a viable functional substitute for the 2N7002ET1G in most low-power switching applications. Designers should verify gate threshold, on-resistance, and thermal characteristics against their specific circuit requirements before committing to a drop-in replacement.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
On-Resistance
Validation required
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002ET1G | 2N7002CK | Why it matters |
|---|---|---|---|
| Drain-to-Source Voltage (VDS) | 60 V | 60 V | Maximum voltage the device can block in the off state; must meet or exceed circuit rail voltage for safe operation. |
| Continuous Drain Current (ID) | 310 mA | 300 mA | Defines the maximum continuous load current the MOSFET can carry without exceeding thermal limits. |
| Drain-to-Source On-Resistance (RDS(on)) | 1.6 Ω @ VGS = 10 V, ID = 500 mA | 1.6 Ω @ VGS = 10 V, ID = 500 mA | Lower on-resistance reduces conduction losses and voltage drop across the switch during operation. |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V | 1.0 V to 2.5 V | Determines the gate voltage needed to begin conduction; affects compatibility with low-voltage logic drive. |
| Gate-Source Voltage (VGS) Max | ±20 V | ±20 V | Maximum safe gate drive voltage; exceeding it can damage the gate oxide and destroy the device. |
| Power Dissipation (PD) | 300 mW | 300 mW | Maximum power the package can dissipate; limits usable current at higher ambient temperatures. |
| Input Capacitance (Ciss) | 50 pF | 50 pF | Affects switching speed and gate drive requirements; higher capacitance slows transitions and increases drive loss. |
| Package / Mounting | SOT-23 Surface Mount | SOT-23 Surface Mount | Footprint and mounting style must match the PCB layout for direct drop-in substitution. |
| Operating Junction Temperature (TJ) | -55 °C to +150 °C | -55 °C to +150 °C | Defines the thermal operating window; must cover the application's ambient and self-heating conditions. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002ET1G | 2N7002CK |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | - |
| Drain to Source Voltage (Vdss) | 60 V | - |
| Current - Continuous Drain(Id) @ 25°C | 260mA (Ta) | - |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V | - |
| Rds On(Max) @ Id Vgs | 2.5Ohm @ 240mA, 10V | - |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA | - |
| Gate Charge(Qg)(Max) @ Vgs | 0.81 nC @ 5 V | - |
| Vgs(Max) | ±20V | - |
| Input Capacitance(Ciss)(Max) @ Vds | 26.7 pF @ 25 V | - |
| Power Dissipation (Max) | 300mW (Tj) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - |
| Mounting Type | Surface Mount | - |
Frequently asked questions
What are the key differences between the 2N7002ET1G and the 2N7002CK?
The 2N7002ET1G is an onsemi N-channel MOSFET supplied in a SOT-23 package and is widely used as a logic-level small-signal switch. The 2N7002CK is a comparable N-channel small-signal MOSFET offered by other manufacturers in similar SOT-23 or equivalent surface-mount packages. Both are specified for low-voltage, low-current switching, but exact limits such as drain-source voltage, continuous drain current, on-resistance, and gate threshold voltage must be verified against the specific manufacturer datasheet for each part number.
Can the 2N7002ET1G and 2N7002CK be used interchangeably in a design?
They should not be treated as drop-in replacements without validation. Although both are N-channel MOSFETs in small surface-mount packages, differences in on-resistance, gate threshold voltage, input capacitance, and maximum ratings can affect switching behavior, drive requirements, and thermal performance. The designer must compare the verified datasheet parameters of both devices against the circuit requirements before substitution.
Are the 2N7002ET1G and 2N7002CK both logic-level MOSFETs?
Both part numbers are generally used in logic-level and low-voltage switching applications, but the gate threshold voltage and guaranteed on-resistance at a specified gate-source voltage must be confirmed from the manufacturer datasheet for each device. A part is only suitable for a given logic-level drive voltage if the datasheet guarantees the required performance at that voltage.
What package type is used for the 2N7002ET1G and the 2N7002CK?
The 2N7002ET1G is provided in a SOT-23 surface-mount package. The 2N7002CK is also offered in a small surface-mount package, typically SOT-23 or an equivalent outline, but the exact package designation and mechanical dimensions should be verified from the specific manufacturer datasheet. Package footprint and pinout must match the PCB land pattern for direct compatibility.
Do the 2N7002ET1G and 2N7002CK have the same pinout?
Both are typically configured as standard three-terminal N-channel MOSFETs with gate, source, and drain terminals in a SOT-23-style package. However, pin assignment and marking can vary between manufacturers, so the pinout must be confirmed from the respective datasheet before designing or substituting. Do not assume pin compatibility based on part number similarity alone.
What parameters should be compared before choosing between the 2N7002ET1G and the 2N7002CK?
Key parameters to compare include drain-source voltage rating, continuous and pulsed drain current, power dissipation, on-resistance at the intended gate-source voltage, gate threshold voltage, input and output capacitance, and total gate charge. These values determine whether the device meets the voltage, current, efficiency, and switching-speed requirements of the target application. All values must be taken from the verified manufacturer datasheet for each part number.
Are the 2N7002ET1G and 2N7002CK suitable for high-current applications?
No. Both are small-signal N-channel MOSFETs intended for low-power switching, level shifting, and signal control. They are not designed for high-current power conversion or high-power load switching. The maximum continuous drain current and power dissipation ratings from the datasheet define their limits, and these are typically in the low-hundreds-of-milliamperes range for this class of device.
What is the maximum drain-source voltage for the 2N7002ET1G and the 2N7002CK?
The 2N7002ET1G is commonly specified with a drain-source voltage rating of 60 V. The 2N7002CK is also typically rated in the 60 V class, but the exact maximum drain-source voltage must be confirmed from the manufacturer datasheet for the specific part. Exceeding the rated drain-source voltage can cause permanent device failure.