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TP0610K-T1-E3

Name: TP0610K-T1-E3
Rating: 4.8 (15 reviews)

+物料清單

MOSFET P-CH 60V 185MA SOT23-3

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製造商部分 #TP0610K-T1-E3
數據表 TP0610K-T1-E3 DataSheet
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規格

屬性	價值
Series	TrenchFET®
Part Status	Obsolete
Base Product Number	TP0610
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	185mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.7 nC @ 15 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	23 pF @ 25 V
Power Dissipation (Max)	350mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Packaging	Cut Tape (CT), Tape & Reel (TR)

概述

Description

"Introduction to TP0610K-T1-E3" likely refers to a specific module, course, or subject code in an educational or technical context. Without specific context, it is difficult to provide detailed information. However, generally speaking, introductions to such courses typically cover the objectives, outcomes, and key topics of the module.
For instance, if TP0610K-T1-E3 is a technical course, it might begin with an overview of the technical principles or theories underpinning the subject, present the core areas of study, and outline the skills or knowledge students are expected to gain. The course might also provide insights into its relevance to real-world applications or industry practices, and introduce the methodologies or tools that will be used throughout the curriculum.
For a precise understanding, you would need to refer to the specific syllabus or course outline provided by the educational institution or organization offering the module.

Equivalent

The TP0610K-T1-E3 is a small-signal MOSFET. Equivalent products might include similar N-channel MOSFETs such as the BSS138 2N7002 or IRLML6344. These components typically have similar voltage and current ratings and are used in switching applications. Always check the datasheets to ensure parameters like threshold voltage, on-resistance, and package type match your requirements.

Features

The TP0610K-T1-E3 is a P-channel MOSFET designed for use in electronic circuits. Key features include:
1. Low On-Resistance: Offers efficient conduction with minimal power loss, enhancing performance in applications where power efficiency is critical.
2. Low Voltage Operation: Optimized for low-voltage applications, making it suitable for battery-powered devices.
3. Fast Switching Speed: Enables quick transitions between the on and off states, beneficial for high-speed applications.
4. Small Package Size: Typically available in a compact package, aiding in space-constrained designs and promoting efficient use of PCB real estate.
5. Thermal Performance: Designed to manage heat effectively, ensuring reliable operation under various thermal conditions.
6. Protection Features: May include built-in protections like ESD protection, enhancing device longevity and reliability.
7. Wide Application Range: Suitable for applications such as power management, load switching, and signal processing in consumer electronics, automotive, and industrial systems.
These features make the TP0610K-T1-E3 a versatile component in modern electronic circuit design.

Pinout

The TP0610K-T1-E3 is a small signal MOSFET manufactured by Vishay Siliconix. It typically comes in a SOT-23 package, which has 3 pins. The primary function of the TP0610K-T1-E3 is to act as a switch or amplifier in electronic circuits. As an N-channel MOSFET, it is used to control electrical power flow in a circuit by turning on and off in response to voltage levels at its gate pin. The three pins are generally assigned as follows:
1. Gate (G): The pin that controls the MOSFET's switching operation by applying a voltage to it.
2. Drain (D): The pin where the main current flow enters the MOSFET when it is in the 'on' state.
3. Source (S): The pin where the current exits the MOSFET.
It is generally used in applications requiring efficient and precise control of low to moderate power levels, such as in signal processing and digital electronics.

Manufacturer

The TP0610K-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of components including diodes, MOSFETs, optoelectronics, resistors, inductors, and capacitors. Vishay serves various markets such as automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical. Known for its extensive product portfolio and technological expertise, Vishay plays a key role in providing components that enhance the performance, efficiency, and reliability of electronic systems.

Application

The TP0610K-T1-E3 is a small-signal MOSFET typically used in applications like load switching, level shifting, and signal processing. It's commonly found in consumer electronics, telecommunications, and portable devices due to its compact size and efficiency. Additionally, it can be utilized in power management circuits, battery-operated devices, and automotive systems where space-saving and effective power control are required. Its low gate charge and fast switching capabilities make it suitable for high-speed switching applications.

Package

The TP0610K-T1-E3 is a MOSFET transistor typically packaged in a SOT-23 (Small Outline Transistor) format. This package type is compact and surface-mountable, making it suitable for use in space-constrained electronic applications.

Frequently Asked Questions

Q: What is the maximum drain-source voltage rating for the TP0610K-T1-E3?
A: The TP0610K-T1-E3 is rated for a maximum drain-to-source voltage (Vdss) of 60 V, suitable for low-voltage power management.

Q: Can this P-Channel MOSFET be driven with a 5V logic level?
A: Yes, it supports drive voltages from 4.5V to 10V, making it compatible with 5V logic for switching applications.

Q: What is the typical on-resistance at 500mA load?
A: The maximum Rds(on) is 6 Ohms at Vgs = 10V and Id = 500mA, ensuring efficient low-current switching.

Q: What is the package type and footprint for this device?
A: It comes in a SOT-23-3 (TO-236) surface-mount package, ideal for compact PCB designs.

Q: Is this part suitable for high-temperature environments?
A: Yes, it operates over a junction temperature range of -55°C to +150°C, suitable for harsh conditions.

Q: What is the maximum power dissipation capability?
A: The maximum power dissipation is 350mW (Ta), limiting continuous current at elevated ambient temperatures.

Q: Does it include built-in ESD protection?
A: Specifications do not indicate ESD protection; standard handling precautions for MOSFETs are recommended.