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IRFPG50PBF
+物料清單MOSFET N-CH 1000V 6.1A TO247-3
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製造商矽尼克斯
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製造商部分 #IRFPG50PBF
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規格
| 屬性 | 價值 |
| Part Status | Active |
| Base Product Number | IRFPG50 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 3.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
| Power Dissipation (Max) | 190W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
| Package / Case | TO-247-3 |
| Packaging | Tube |
概述
Description
The IRFPG50PBF is a Power MOSFET from Infineon Technologies, designed for high-voltage and high-speed switching applications.
### Key Features:
- Voltage Rating: 1000V (VDSS)
- Current Rating: 4.3A (ID at 25°C)
- Low On-Resistance (RDS(on)): 3.0Ω (typical)
- Fast Switching Speed
- TO-247 Package (robust thermal performance)
### Applications:
- Switching Power Supplies
- Motor Control
- Inverters & Converters
- Industrial & Automotive Systems
### Advantages:
- High voltage capability
- Low gate charge for efficient switching
- Avalanche energy rated for reliability
This MOSFET is ideal for demanding power electronics where efficiency and durability are critical.
### Key Features:
- Voltage Rating: 1000V (VDSS)
- Current Rating: 4.3A (ID at 25°C)
- Low On-Resistance (RDS(on)): 3.0Ω (typical)
- Fast Switching Speed
- TO-247 Package (robust thermal performance)
### Applications:
- Switching Power Supplies
- Motor Control
- Inverters & Converters
- Industrial & Automotive Systems
### Advantages:
- High voltage capability
- Low gate charge for efficient switching
- Avalanche energy rated for reliability
This MOSFET is ideal for demanding power electronics where efficiency and durability are critical.
Equivalent
Equivalent products to the IRFPG50PBF (500V, 4.3A, N-Channel MOSFET) include:
- IRFP450PBF (500V, 14A)
- IRFP460PBF (500V, 20A)
- STP8NM50FD (500V, 7.5A, STMicroelectronics)
- FQP8N50C (500V, 8A, Fairchild/ON Semi)
These alternatives offer similar voltage ratings but vary in current handling. Verify specs for compatibility.
- IRFP450PBF (500V, 14A)
- IRFP460PBF (500V, 20A)
- STP8NM50FD (500V, 7.5A, STMicroelectronics)
- FQP8N50C (500V, 8A, Fairchild/ON Semi)
These alternatives offer similar voltage ratings but vary in current handling. Verify specs for compatibility.
Features
The IRFPG50PBF is an N-channel power MOSFET with the following key features:
- Voltage Rating: 1000V (VDSS)
- Current Rating: 4.3A (ID at 25°C)
- Low On-Resistance: 1.4Ω (RDS(on) max at VGS = 10V)
- Fast Switching: Suitable for high-frequency applications
- High Input Impedance: Easy gate drive with minimal power loss
- Avalanche Energy Rated: Enhanced ruggedness
- TO-247 Package: Robust thermal performance
Designed for switching power supplies, inverters, and motor control, it offers efficient high-voltage operation.
- Voltage Rating: 1000V (VDSS)
- Current Rating: 4.3A (ID at 25°C)
- Low On-Resistance: 1.4Ω (RDS(on) max at VGS = 10V)
- Fast Switching: Suitable for high-frequency applications
- High Input Impedance: Easy gate drive with minimal power loss
- Avalanche Energy Rated: Enhanced ruggedness
- TO-247 Package: Robust thermal performance
Designed for switching power supplies, inverters, and motor control, it offers efficient high-voltage operation.
Pinout
The IRFPG50PBF is a Power MOSFET with 3 pins (TO-247AC package):
1. Gate (G) – Controls the switching operation (input signal).
2. Drain (D) – Main current-carrying terminal (connects to load).
3. Source (S) – Ground/reference terminal.
Key Features:
- 500V drain-source voltage (VDS).
- 4.3A continuous drain current (ID).
- 1.4Ω on-resistance (RDS(on)).
- 150W power dissipation.
Commonly used in switching power supplies, inverters, and motor control due to its high voltage and fast switching capability.
1. Gate (G) – Controls the switching operation (input signal).
2. Drain (D) – Main current-carrying terminal (connects to load).
3. Source (S) – Ground/reference terminal.
Key Features:
- 500V drain-source voltage (VDS).
- 4.3A continuous drain current (ID).
- 1.4Ω on-resistance (RDS(on)).
- 150W power dissipation.
Commonly used in switching power supplies, inverters, and motor control due to its high voltage and fast switching capability.
Application
The IRFPG50PBF, a high-power MOSFET, is commonly used in:
1. Switching Power Supplies – Efficient energy conversion in AC/DC and DC/DC applications.
2. Motor Drives – Controls motors in industrial and automotive systems.
3. Inverters – Converts DC to AC in solar inverters and UPS systems.
4. Audio Amplifiers – Enhances power output in high-fidelity audio systems.
5. RF Amplifiers – Used in radio frequency applications for signal amplification.
Its high voltage (500V) and current (7.7A) ratings make it suitable for robust, high-performance circuits.
1. Switching Power Supplies – Efficient energy conversion in AC/DC and DC/DC applications.
2. Motor Drives – Controls motors in industrial and automotive systems.
3. Inverters – Converts DC to AC in solar inverters and UPS systems.
4. Audio Amplifiers – Enhances power output in high-fidelity audio systems.
5. RF Amplifiers – Used in radio frequency applications for signal amplification.
Its high voltage (500V) and current (7.7A) ratings make it suitable for robust, high-performance circuits.
Package
The IRFPG50PBF is packaged in a TO-247AC (also known as TO-247-3) through-hole package. This package type is robust, suitable for high-power applications, and features three leads for gate, drain, and source connections. It provides efficient thermal dissipation due to its design.
