TK3A90E,S4X

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TK3A90E,S4X

+物料清單

PB-F POWER MOSFET TRANSISTOR TO-

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正品保證

規格

屬性 價值
Supplier Toshiba Semiconductor and Storage
Package / Case Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain(Id) @ 25°C 2.5A (Ta)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 4.6Ohm @ 1.3A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 15 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 650 pF @ 25 V
Power Dissipation (Max) 35W (Tc)
Operating Temperature 150°C
Mounting Type Through Hole
Supplier Device Package TO-220SIS

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