TK12V60W,LVQ

圖片僅供參考

TK12V60W,LVQ

+物料清單

MOSFET N-CH 600V 11.5A 4DFN

  • 製造商東芝電晶體與存儲

  • 製造商部分 #TK12V60W,LVQ

  • 有存貨9238

365 天品質保證

7*24 小時服務保證

90-日售後保障

正品保證

規格

屬性 價值
Supplier Toshiba Semiconductor and Storage
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series DTMOSIV
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain(Id) @ 25°C 11.5A (Ta)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 300mOhm @ 5.8A, 10V
Vgs(th)(Max) @ Id 3.7V @ 600µA
Gate Charge(Qg)(Max) @ Vgs 25 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 890 pF @ 300 V
FET Feature Super Junction
Power Dissipation (Max) 104W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-DFN-EP (8x8)

與TK12V60W,LVQ相關的產品