規格
| 屬性 | 價值 |
| Package / Case | Tube |
| Series | Automotive, AEC-Q101, MDmesh™ DM2 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 60A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 50mOhm @ 30A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 120 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 5500 pF @ 100 V |
| Power Dissipation (Max) | 446W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
概述
Description
The STW65N65DM2AG is a 650V, 65A N-channel Power MOSFET from STMicroelectronics, designed for high-efficiency power applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 35mΩ at 10V, reducing conduction losses.
- Fast Switching: Optimized for high-frequency operations like SMPS, motor drives, and inverters.
- Avalanche-Rugged: Enhanced reliability under high-energy stress conditions.
- TO-247 Package: Ensures efficient thermal dissipation for high-power scenarios.
Ideal for industrial, automotive, and renewable energy systems, it balances performance with robustness.
- Low On-Resistance (RDS(on)): Typically 35mΩ at 10V, reducing conduction losses.
- Fast Switching: Optimized for high-frequency operations like SMPS, motor drives, and inverters.
- Avalanche-Rugged: Enhanced reliability under high-energy stress conditions.
- TO-247 Package: Ensures efficient thermal dissipation for high-power scenarios.
Ideal for industrial, automotive, and renewable energy systems, it balances performance with robustness.
Equivalent
Equivalent products to the STW65N65DM2AG (650V, 65A MOSFET) include:
- Infineon IPA65R600E7 (650V, 72A)
- ON Semiconductor FDL65N65 (650V, 65A)
- STMicroelectronics STP65N65M5 (650V, 65A)
- Vishay SiHG65N65E (650V, 65A)
Check datasheets for exact compatibility in your application.
- Infineon IPA65R600E7 (650V, 72A)
- ON Semiconductor FDL65N65 (650V, 65A)
- STMicroelectronics STP65N65M5 (650V, 65A)
- Vishay SiHG65N65E (650V, 65A)
Check datasheets for exact compatibility in your application.
Features
The STW65N65DM2AG is a 650V, 65A N-channel MOSFET with the following key features:
- Voltage Rating: 650V (Drain-Source)
- Current Rating: 65A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 38mΩ (max) @ 10V VGS
- Fast Switching: Optimized for high efficiency in power applications
- Avalanche Energy Rated: Robust against inductive load spikes
- Low Gate Charge (Qg): Enhances switching performance
- Package: TO-247 (3-pin), suitable for high-power applications
- Applications: Used in SMPS, motor drives, inverters, and industrial power systems.
This MOSFET combines high voltage capability with low conduction losses, making it ideal for demanding power electronics.
- Voltage Rating: 650V (Drain-Source)
- Current Rating: 65A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 38mΩ (max) @ 10V VGS
- Fast Switching: Optimized for high efficiency in power applications
- Avalanche Energy Rated: Robust against inductive load spikes
- Low Gate Charge (Qg): Enhances switching performance
- Package: TO-247 (3-pin), suitable for high-power applications
- Applications: Used in SMPS, motor drives, inverters, and industrial power systems.
This MOSFET combines high voltage capability with low conduction losses, making it ideal for demanding power electronics.
Manufacturer
The STW65N65DM2AG is manufactured by STMicroelectronics, a leading global semiconductor company.
STMicroelectronics is a multinational corporation headquartered in Geneva, Switzerland, specializing in high-performance semiconductor solutions for a wide range of applications, including automotive, industrial, consumer electronics, and IoT. Known for innovation and reliability, STMicroelectronics produces power MOSFETs, microcontrollers, sensors, and analog ICs.
The STW65N65DM2AG is a 650V, 65A power MOSFET designed for efficient switching applications.
STMicroelectronics is a multinational corporation headquartered in Geneva, Switzerland, specializing in high-performance semiconductor solutions for a wide range of applications, including automotive, industrial, consumer electronics, and IoT. Known for innovation and reliability, STMicroelectronics produces power MOSFETs, microcontrollers, sensors, and analog ICs.
The STW65N65DM2AG is a 650V, 65A power MOSFET designed for efficient switching applications.
Application
The STW65N65DM2AG is a 650V, 65A N-channel MOSFET, ideal for high-power applications. Key areas include:
1. Switched-Mode Power Supplies (SMPS) – Used in AC/DC and DC/DC converters.
2. Motor Drives – Efficient control in industrial and automotive systems.
3. Solar Inverters – Enhances energy conversion in renewable systems.
4. Uninterruptible Power Supplies (UPS) – Ensures reliable power backup.
5. Induction Heating – Supports high-frequency power switching.
Its low on-resistance (RDS(on)) and fast switching make it suitable for energy-efficient, high-performance designs.
1. Switched-Mode Power Supplies (SMPS) – Used in AC/DC and DC/DC converters.
2. Motor Drives – Efficient control in industrial and automotive systems.
3. Solar Inverters – Enhances energy conversion in renewable systems.
4. Uninterruptible Power Supplies (UPS) – Ensures reliable power backup.
5. Induction Heating – Supports high-frequency power switching.
Its low on-resistance (RDS(on)) and fast switching make it suitable for energy-efficient, high-performance designs.
Package
The STW65N65DM2AG is a power MOSFET housed in a TO-247 package. This package type is widely used for high-power applications due to its robust thermal and electrical performance. The TO-247 offers excellent heat dissipation, making it suitable for demanding environments like power supplies and motor drives. Its three-lead design ensures reliable high-current handling.
