規格
| 屬性 | 價值 |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 300mA (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 15Ohm @ 400mA, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 6.9 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 94 pF @ 25 V |
| PowerDissipation(Max) | 3.3W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223 |
概述
Description
The STN1NK60Z is an N-channel power MOSFET designed for high-efficiency switching applications. Key features include:
- 600V Drain-Source Voltage (VDS) – Suitable for high-voltage circuits.
- 1A Continuous Drain Current (ID) – Ideal for low-power applications.
- Low On-Resistance (RDS(on)) – Minimizes conduction losses.
- Fast Switching Speed – Enhances performance in switching regulators, converters, and motor control.
- TO-252 (DPAK) Package – Compact and thermally efficient.
Common uses include power supplies, LED drivers, and DC-DC converters. Its robust design ensures reliability in demanding environments.
For detailed specs, refer to the datasheet.
- 600V Drain-Source Voltage (VDS) – Suitable for high-voltage circuits.
- 1A Continuous Drain Current (ID) – Ideal for low-power applications.
- Low On-Resistance (RDS(on)) – Minimizes conduction losses.
- Fast Switching Speed – Enhances performance in switching regulators, converters, and motor control.
- TO-252 (DPAK) Package – Compact and thermally efficient.
Common uses include power supplies, LED drivers, and DC-DC converters. Its robust design ensures reliability in demanding environments.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the STN1NK60Z (N-channel MOSFET, 600V, 1A) include:
- STP1NK60ZFP (similar specs, TO-220FP package)
- IRFBC40 (600V, 6.2A, TO-220)
- 2N60 (600V, 2A, TO-92/TO-220)
- FQP1N60 (600V, 1.3A, TO-220)
Check datasheets for exact compatibility in your circuit.
- STP1NK60ZFP (similar specs, TO-220FP package)
- IRFBC40 (600V, 6.2A, TO-220)
- 2N60 (600V, 2A, TO-92/TO-220)
- FQP1N60 (600V, 1.3A, TO-220)
Check datasheets for exact compatibility in your circuit.
Features
The STN1NK60Z is an N-channel MOSFET with the following key features:
- Voltage Rating: 600V drain-source voltage (VDSS), suitable for high-voltage applications.
- Current Rating: 1A continuous drain current (ID).
- Low On-Resistance: 12Ω (typical) at VGS = 10V, reducing conduction losses.
- Fast Switching: Optimized for high-speed switching applications.
- Low Gate Charge (Qg): Enhances efficiency in switching circuits.
- Avalanche Rugged: Improved reliability under inductive loads.
- Package: TO-92, a compact through-hole package for easy mounting.
Ideal for low-power SMPS, lighting, and switching circuits where high voltage and efficiency are required.
- Voltage Rating: 600V drain-source voltage (VDSS), suitable for high-voltage applications.
- Current Rating: 1A continuous drain current (ID).
- Low On-Resistance: 12Ω (typical) at VGS = 10V, reducing conduction losses.
- Fast Switching: Optimized for high-speed switching applications.
- Low Gate Charge (Qg): Enhances efficiency in switching circuits.
- Avalanche Rugged: Improved reliability under inductive loads.
- Package: TO-92, a compact through-hole package for easy mounting.
Ideal for low-power SMPS, lighting, and switching circuits where high voltage and efficiency are required.
Pinout
The STN1NK60Z is a N-channel MOSFET in a TO-92 package with 3 pins (Gate, Drain, Source).
Key Features:
- Voltage Rating: 600V
- Current Rating: 1A
- Low On-Resistance (RDS(on)): 10Ω (typ.)
- Fast Switching Speed
Pin Functions:
1. Gate (G): Controls the MOSFET's conduction.
2. Drain (D): Connects to the load (high-voltage side).
3. Source (S): Ground/reference terminal.
Commonly used in low-power switching applications, such as power supplies and converters.
Key Features:
- Voltage Rating: 600V
- Current Rating: 1A
- Low On-Resistance (RDS(on)): 10Ω (typ.)
- Fast Switching Speed
Pin Functions:
1. Gate (G): Controls the MOSFET's conduction.
2. Drain (D): Connects to the load (high-voltage side).
3. Source (S): Ground/reference terminal.
Commonly used in low-power switching applications, such as power supplies and converters.
Manufacturer
The STN1NK60Z is manufactured by STMicroelectronics, a multinational semiconductor company headquartered in Geneva, Switzerland.
STMicroelectronics is a leading global semiconductor manufacturer specializing in analog, digital, and mixed-signal ICs, as well as power and MEMS devices. The company serves industries like automotive, industrial, consumer electronics, and IoT.
The STN1NK60Z is a N-channel MOSFET designed for power management applications, offering high efficiency and reliability. STMicroelectronics is known for its innovation and high-quality semiconductor solutions.
STMicroelectronics is a leading global semiconductor manufacturer specializing in analog, digital, and mixed-signal ICs, as well as power and MEMS devices. The company serves industries like automotive, industrial, consumer electronics, and IoT.
The STN1NK60Z is a N-channel MOSFET designed for power management applications, offering high efficiency and reliability. STMicroelectronics is known for its innovation and high-quality semiconductor solutions.
Package
The STN1NK60Z is a N-channel MOSFET in a TO-92 package. It is designed for low-power applications, with a 600V drain-source voltage and 1A current rating. The TO-92 package is a small, through-hole type, commonly used for discrete transistors. Its compact size and ease of mounting make it suitable for cost-sensitive, low-power designs like power supplies or lighting.
