STW3N150

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STW3N150

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MOSFET N-CH 1500V 2.5A TO247-3

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規格

屬性 價值
Package / Case Tube
Series PowerMESH™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V
Current - Continuous Drain(Id) @ 25°C 2.5A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 9Ohm @ 1.3A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 29.3 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 939 pF @ 25 V
Power Dissipation (Max) 140W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3

概述

Description

The STW3N150 is a high-voltage N-channel MOSFET designed for power applications. Key features include:
- Voltage Rating: 1500V
- Current Rating: 3A
- Low On-Resistance (RDS(on)): Reduces conduction losses
- Fast Switching: Suitable for high-frequency circuits
- Applications: Used in power supplies, inverters, and industrial systems
It comes in a TO-247 package, ensuring good thermal performance. The device is optimized for efficiency in high-voltage environments, making it ideal for energy-conscious designs.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the STW3N150 (150V, 3A MOSFET) include:
- IRF540N (100V, 33A) – Higher current, lower voltage.
- STP3N150 (150V, 3A) – Similar specs, same series.
- IRF840 (500V, 8A) – Higher voltage/current.
- FQP3N150 (150V, 3A) – Direct alternative.
Check datasheets for exact compatibility.

Package

The STW3N150 is a power MOSFET typically available in a TO-247 package. This package is robust, suitable for high-power applications, and features three leads for gate, drain, and source connections. The TO-247 design ensures efficient heat dissipation, making it ideal for demanding circuits.

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